CSD88584Q5DC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 50A、40V、N 沟道同步降压 NexFET™ 功率 MOSFET Dual-Cool™ 电源块
VDS (V): 40
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 50
Power loss (W): 2.4
Ploss current (A): 35
Features: Motor control
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 50
Power loss (W): 2.4
Ploss current (A): 35
Features: Motor control
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD88599Q5DC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 40A、60V、N 沟道同步降压 NexFET™ 功率 MOSFET Dual-Cool™ 电源块
VDS (V): 60
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 3
Ploss current (A): 30
Features: Motor control
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 3
Ploss current (A): 30
Features: Motor control
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87313DMS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的双路共漏极、5.5mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 28
QGD (typ) (nC): 6
QGS (typ) (nC): 6.3
ID - silicon limited at TC=25°C (A): 17
ID - package limited (A): 17
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 28
QGD (typ) (nC): 6
QGS (typ) (nC): 6.3
ID - silicon limited at TC=25°C (A): 17
ID - package limited (A): 17
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18510Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、0.96mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.96
Rds(on) at VGS=4.5 V (max) (mΩ): 1.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 118
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 300
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.96
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 118
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 300
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18510KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、1.7mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.7
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 119
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 274
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.7
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 119
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 274
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18512Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、1.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
Rds(on) at VGS=4.5 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 75
QGD (typ) (nC): 13.3
QGS (typ) (nC): 15.1
ID - silicon limited at TC=25°C (A): 211
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 75
QGD (typ) (nC): 13.3
QGS (typ) (nC): 15.1
ID - silicon limited at TC=25°C (A): 211
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18543Q3A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、9.9mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.9
Rds(on) at VGS=4.5 V (max) (mΩ): 15.6
VGSTH typ (typ) (V): 2
QG (typ) (nC): 11.1
QGD (typ) (nC): 1.7
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 35
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 15.6
VGSTH typ (typ) (V): 2
QG (typ) (nC): 11.1
QGD (typ) (nC): 1.7
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 35
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18510KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、1.7mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.7
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 119
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 274
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.7
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 119
QGD (typ) (nC): 21
QGS (typ) (nC): 28
ID - silicon limited at TC=25°C (A): 274
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18511Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 63
QGD (typ) (nC): 11.2
QGS (typ) (nC): 13.2
ID - silicon limited at TC=25°C (A): 159
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 63
QGD (typ) (nC): 11.2
QGS (typ) (nC): 13.2
ID - silicon limited at TC=25°C (A): 159
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18513Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.4mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 45
QGD (typ) (nC): 8.8
QGS (typ) (nC): 9.1
ID - silicon limited at TC=25°C (A): 124
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 45
QGD (typ) (nC): 8.8
QGS (typ) (nC): 9.1
ID - silicon limited at TC=25°C (A): 124
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150