BSS806NH6327XTSA1
制造商: INFINEON TECHNOLOGIES分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 表面贴装型 N 通道 20 V 2.3A（Ta） 500mW（Ta） PG-SOT23
FET 类型: N 通道
技术: MOSFET（金属氧化物）
漏源电压（Vdss）: 20 V
25°C 时电流 - 连续漏极 (Id): 2.3A（Ta）
驱动电压（最大 Rds On，最小 Rds On）: 1.8V，2.5V
不同 Id、Vgs 时导通电阻（最大值）: 57 毫欧 @ 2.3A，2.5V
不同 Id 时 Vgs(th)（最大值）: 750mV @ 11µA
不同 Vgs 时栅极电荷 (Qg)（最大值）: 1.7 nC @ 2.5 V
Vgs（最大值）: ±8V
不同 Vds 时输入电容 (Ciss)（最大值）: 529 pF @ 10 V
FET 功能: -
功率耗散（最大值）: 500mW（Ta）
工作温度: -55°C ~ 150°C（TJ）
等级: 汽车级
资质: AEC-Q101
安装类型: 表面贴装型
供应商器件封装: PG-SOT23
封装/外壳: TO-236-3，SC-59，SOT-23-3
CSD86356Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 40A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD86336Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.8
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.8
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25501F3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 0.7mm LGA、具有栅极 ESD 保护的单路、76mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -20
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
Rds(on) at VGS=2.5 V (max) (mΩ): 125
VGSTH typ (typ) (V): -0.75
QG (typ) (nC): 1.02
QGD (typ) (nC): 0.09
QGS (typ) (nC): 0.45
ID - silicon limited at TC=25°C (A): 3.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -20
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
Rds(on) at VGS=2.5 V (max) (mΩ): 125
更多
VGSTH typ (typ) (V): -0.75
QG (typ) (nC): 1.02
QGD (typ) (nC): 0.09
QGS (typ) (nC): 0.45
ID - silicon limited at TC=25°C (A): 3.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18511KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.6
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 64
QGD (typ) (nC): 9.7
QGS (typ) (nC): 17.9
ID - silicon limited at TC=25°C (A): 194
ID - package limited (A): 110
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 64
QGD (typ) (nC): 9.7
QGS (typ) (nC): 17.9
ID - silicon limited at TC=25°C (A): 194
ID - package limited (A): 110
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18511KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.6
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 64
QGD (typ) (nC): 9.7
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 194
ID - package limited (A): 110
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 64
QGD (typ) (nC): 9.7
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 194
ID - package limited (A): 110
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD87503Q3E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的双路共源极、21.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=10 V (max) (mΩ): 16.9
Rds(on) at VGS=4.5 V (max) (mΩ): 21.9
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 13.4
QGD (typ) (nC): 5.8
QGS (typ) (nC): 4.8
ID - silicon limited at TC=25°C (A): 10
ID - package limited (A): 10
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=10 V (max) (mΩ): 16.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 21.9
VGSTH typ (typ) (V): 1.7
QG (typ) (nC): 13.4
QGD (typ) (nC): 5.8
QGS (typ) (nC): 4.8
ID - silicon limited at TC=25°C (A): 10
ID - package limited (A): 10
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17318Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单路、16.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 16.9
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 6
QGD (typ) (nC): 1.3
QGS (typ) (nC): 1.5
ID - silicon limited at TC=25°C (A): 25
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 16.9
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 6
QGD (typ) (nC): 1.3
QGS (typ) (nC): 1.5
ID - silicon limited at TC=25°C (A): 25
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD22205L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.2mm x 1.2mm LGA 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.9
Rds(on) at VGS=2.5 V (max) (mΩ): 15
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 6.5
QGD (typ) (nC): 1
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7.4
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.9
Rds(on) at VGS=2.5 V (max) (mΩ): 15
更多
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 6.5
QGD (typ) (nC): 1
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7.4
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD22206W
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.7
Rds(on) at VGS=2.5 V (max) (mΩ): 9.1
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 11.2
QGD (typ) (nC): 1.8
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.7
Rds(on) at VGS=2.5 V (max) (mΩ): 9.1
更多
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 11.2
QGD (typ) (nC): 1.8
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150