CSD18532KCS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 TO-220 封装的单路、4.2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.2 Rds(on) at VGS=4.5 V (max) (mΩ): 5.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 44 QGD (typ) (nC): 6.9 QGS (typ) (nC): 10 ID - silicon limited at TC=25°C (A): 169 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175 VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.2
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 44 QGD (typ) (nC): 6.9 QGS (typ) (nC): 10 ID - silicon limited at TC=25°C (A): 169 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175

CSD17555Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、2.7mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 2.7 Rds(on) at VGS=4.5 V (max) (mΩ): 3.4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 23 QGD (typ) (nC): 5 QGS (typ) (nC): 7.5 ID - silicon limited at TC=25°C (A): 116 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 2.7
Rds(on) at VGS=4.5 V (max) (mΩ): 3.4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 23 QGD (typ) (nC): 5 QGS (typ) (nC): 7.5 ID - silicon limited at TC=25°C (A): 116 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17551Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、8.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 8.8 Rds(on) at VGS=4.5 V (max) (mΩ): 11 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 6 QGD (typ) (nC): 1.4 QGS (typ) (nC): 2.8 ID - silicon limited at TC=25°C (A): 48 ID - package limited (A): 48 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 8.8
Rds(on) at VGS=4.5 V (max) (mΩ): 11 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 6 QGD (typ) (nC): 1.4 QGS (typ) (nC): 2.8 ID - silicon limited at TC=25°C (A): 48 ID - package limited (A): 48 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18501Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、3.2mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.2 Rds(on) at VGS=4.5 V (max) (mΩ): 4.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 42 QGD (typ) (nC): 5.9 QGS (typ) (nC): 8.1 ID - silicon limited at TC=25°C (A): 161 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.2
Rds(on) at VGS=4.5 V (max) (mΩ): 4.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 42 QGD (typ) (nC): 5.9 QGS (typ) (nC): 8.1 ID - silicon limited at TC=25°C (A): 161 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18503Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、4.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.3 Rds(on) at VGS=4.5 V (max) (mΩ): 6.2 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 26 QGD (typ) (nC): 4.3 QGS (typ) (nC): 4.5 ID - silicon limited at TC=25°C (A): 120 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.3
Rds(on) at VGS=4.5 V (max) (mΩ): 6.2 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 26 QGD (typ) (nC): 4.3 QGS (typ) (nC): 4.5 ID - silicon limited at TC=25°C (A): 120 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18504Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、6.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 6.6 Rds(on) at VGS=4.5 V (max) (mΩ): 9.8 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 16 QGD (typ) (nC): 2.4 QGS (typ) (nC): 3.2 ID - silicon limited at TC=25°C (A): 75 ID - package limited (A): 50 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 6.6
Rds(on) at VGS=4.5 V (max) (mΩ): 9.8 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 16 QGD (typ) (nC): 2.4 QGS (typ) (nC): 3.2 ID - silicon limited at TC=25°C (A): 75 ID - package limited (A): 50 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18531Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、4.6mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.6 Rds(on) at VGS=4.5 V (max) (mΩ): 5.8 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 36 QGD (typ) (nC): 5.9 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 134 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.6
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 36 QGD (typ) (nC): 5.9 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 134 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17553Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、3.1mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.1 Rds(on) at VGS=4.5 V (max) (mΩ): 4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 17.5 QGD (typ) (nC): 4.7 QGS (typ) (nC): 5.8 ID - silicon limited at TC=25°C (A): 100 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.1
Rds(on) at VGS=4.5 V (max) (mΩ): 4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 17.5 QGD (typ) (nC): 4.7 QGS (typ) (nC): 5.8 ID - silicon limited at TC=25°C (A): 100 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD16342Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、5.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 25 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 5.5 VGSTH typ (typ) (V): 0.85 QG (typ) (nC): 6.5 QGD (typ) (nC): 1.2 QGS (typ) (nC): 2.1 ID - silicon limited at TC=25°C (A): 21 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 25 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 5.5 VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 6.5 QGD (typ) (nC): 1.2 QGS (typ) (nC): 2.1 ID - silicon limited at TC=25°C (A): 21 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD25211W1015


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、33mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -20 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 33 Rds(on) at VGS=2.5 V (max) (mΩ): 44 VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 3.4 QGD (typ) (nC): 0.2 QGS (typ) (nC): 1.1 ID - silicon limited at TC=25°C (A): 3.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -20 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 33 Rds(on) at VGS=2.5 V (max) (mΩ): 44
VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 3.4 QGD (typ) (nC): 0.2 QGS (typ) (nC): 1.1 ID - silicon limited at TC=25°C (A): 3.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150