CSD16327Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、4.8mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.8
VGSTH typ (typ) (V): 1.2
QG (typ) (nC): 6.2
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 112
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.8
VGSTH typ (typ) (V): 1.2
更多
QG (typ) (nC): 6.2
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 112
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87330Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 2
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 2
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87331Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 15A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.3
Ploss current (A): 10
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.3
Ploss current (A): 10
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87353Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 40A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 3.3
Ploss current (A): 25
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 3.3
Ploss current (A): 25
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87352Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 25A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 1.8
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 1.8
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17322Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、12.4mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.4
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 3.6
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 87
ID - package limited (A): 87
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.4
VGSTH typ (typ) (V): 1.6
更多
QG (typ) (nC): 3.6
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 87
ID - package limited (A): 87
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17327Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、15.5mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 15.5
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 15.5
VGSTH typ (typ) (V): 1.6
更多
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17522Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、8.1mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 8.1
Rds(on) at VGS=4.5 V (max) (mΩ): 12.4
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 3.6
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 87
ID - package limited (A): 87
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 8.1
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 12.4
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 3.6
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.6
ID - silicon limited at TC=25°C (A): 87
ID - package limited (A): 87
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17527Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、10.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.8
Rds(on) at VGS=4.5 V (max) (mΩ): 15.5
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.8
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 15.5
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17501Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.9
Rds(on) at VGS=4.5 V (max) (mΩ): 3.7
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 13.2
QGD (typ) (nC): 3.5
QGS (typ) (nC): 5.4
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.7
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 13.2
QGD (typ) (nC): 3.5
QGS (typ) (nC): 5.4
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150