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BSS169I

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package

ID (@25°C): NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Pin Count: 3.0Pins Polarity: N QG(typ @4.5V): 2.1nC VDS: NoneV VGS(th): -2.2V Special Features: Depletion mode RDS (on)(@0V): 12000.0mΩ Budgetary Price €/1k: 0.07

ISP25DP06LM

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -13.9nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Power Budgetary Price €/1k: 0.22

BSP296N

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 100 V in SOT-223 package

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Pin Count: 4.0Pins Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 114.8pF Coss: 19.7pF Special Features: Small Power QG(typ @10V): 4.5nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.27

BSS214NW

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 20 V in SOT- 323 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 107.0pF Coss: 46.0pF RDS (on): NonemΩ RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.04

IRLML2060

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

Moisture Sensitivity Level: 1 Package: SOT-23 Polarity: N Qgd: 0.4nC Tj: None°C VGS: NoneV Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.75V ID (@25°C): NoneA QG(typ @4.5V): 0.67nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.07

BSS169

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

IDpuls: NoneA VGS(th): -2.2V RthJC: NoneK/W Operating Temperature: None°C Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV QG(typ @4.5V): 2.1nC ID (@25°C): NoneA Package: SOT-23 Mounting: SMD Mode: Depletion Ciss: 51.0pF Coss: 9.0pF RDS (on)(@10V): NonemΩ Special Features: Depletion mode Polarity: N RDS (on)(@0V): 12000.0mΩ Budgetary Price €/1k: 0.09

ISP98DP10LM

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ P-Channel MOSFET 100V in SOT-223

ID (@25°C): NoneA ID: NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Pin Count: 4.0Pins Polarity: P QG(typ @4.5V): -3.6nC QG(typ @10V): -7.2nC QG: -7.2nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on): NonemΩ VDS: NoneV VGS(th): NoneV VGS(th): -1.5V Budgetary Price €/1k: 0.19

BSP170P

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 110.0K/W Pin Count: 4.0Pins Ptot: NonemW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 328.0pF Coss: 105.0pF Special Features: Small Power QG(typ @10V): -10.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.25

BSS192P

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-89

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Rth: 125.0K/W RthJA: NoneK/W Pin Count: 4.0Pins Package: SOT-89 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 83.0pF Coss: 13.0pF Special Features: Small Power QG(typ @10V): -4.9nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.13

ISP25DP06NM

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -10.8nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Power Budgetary Price €/1k: 0.2