BSR92P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SC-59
Rth: 250.0K/W
Ptot: NoneW
VDS: NoneV
VGS(th): NoneV
Operating Temperature: None°C
IDpuls: NoneA
Mounting: SMD
Mode: Enhancement
Package: SC59
Polarity: P
Ciss: 82.0pF
Coss: 12.0pF
Special Features: Small Signal
QG(typ @10V): -3.6nC
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
Budgetary Price €/1k: 0.12
BSL606SN
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 60 V in TSOP-6 package
IDpuls: NoneA
VGS(th): NoneV
Rth: 62.5K/W
RthJA: NoneK/W
Pin Count: 6.0Pins
Ptot: NoneW
VDS: NoneV
Package: TSOP-6
Polarity: N
Mounting: SMD
Mode: Enhancement
Ciss: 494.0pF
Coss: 131.0pF
Special Features: Small Power
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Budgetary Price €/1k: 0.18
BSS83P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-23
IDpuls: NoneA
VGS(th): NoneV
Rth: 350.0K/W
Ptot: NoneW
VDS: NoneV
Package: SOT-23
Ciss: 62.0pF
Coss: 19.0pF
Special Features: Small Signal
QG(typ @10V): 2.38nC
RDS (on)(@10V): NonemΩ
Polarity: P
ID (@25°C): NoneA
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.05
BSD235N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 20 V in SOT363 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
Ciss: 49.0pF
Coss: 23.0pF
RDS (on): NonemΩ
RDS (on)(@2.5V): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Polarity: N+N
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Operating Temperature: None°C
Package: SOT-363
Special Features: Dual
VGS(th): 0.95V
Budgetary Price €/1k: 0.07
IDpuls: NoneA
IDpuls: NoneA
VGS(th): NoneV
VGS(th): NoneV
Operating Temperature: None°C
Pin Count: 6.0Pins
Ptot: NoneW
VDS: NoneV
VDS: NoneV
Package: SOT-363
Mounting: SMD
Mode: Enhancement
Ciss: 37.0pF
Ciss: 47.0pF
Coss: 17.0pF
Coss: 24.0pF
RDS (on)(@2.5V): NonemΩ
RDS (on)(@2.5V): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V): NonemΩ
更多
RDS (on)(@4.5V LL): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Special Features: Small Signal
ID (@25°C): NoneA
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Polarity: N+P
Budgetary Price €/1k: 0.07
IRLTS6342
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel StrongIRFET™ MOSFET in a TSOP-6 (Micro 6) package
Mounting: SMD
Ptot(@ TA=25°C): NoneW
Qgd: 4.6nC
Tj: None°C
VGS: NoneV
VDS: NoneV
Moisture Sensitivity Level: 1
Polarity: N
RthJA: NoneK/W
Package: TSOP-6
RDS (on)(@4.5V): NonemΩ
VGS(th): 0.8V
ID (@25°C): NoneA
QG(typ @4.5V): 11.0nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.12
BSS223PW
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -20 V, SOT-223
IDpuls: NoneA
VGS(th): NoneV
Rth: 500.0K/W
Ptot: NoneW
VDS: NoneV
Package: SOT-323
Ciss: 45.0pF
Coss: 21.0pF
Special Features: Small Signal
RDS (on)(@4.5V): NonemΩ
Polarity: P
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.03
ISP20EP10LM
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ P-Channel MOSFET 100V in SOT-223
ID (@25°C): NoneA
ID: NoneA
IDpuls: NoneA
Mounting: SMT
Operating Temperature: None°C
Ptot: NoneW
Package: SOT-223
Pin Count: 4.0Pins
Polarity: P
QG(typ @4.5V): -1.8nC
QG(typ @10V): -3.5nC
QG: -3.5nC
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VDS: NoneV
VGS(th): NoneV
VGS(th): -1.5V
Budgetary Price €/1k: 0.18
IRLML0100
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package
VGS: NoneV
Polarity: N
Mounting: SMD
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
VDS: NoneV
Moisture Sensitivity Level: 1
Package: SOT-23
Qgd: 1.2nC
Tj: None°C
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): 1.75V
ID (@25°C): NoneA
QG(typ @4.5V): 2.5nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.08
BSP317P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223
IDpuls: NoneA
VGS(th): NoneV
Rth: 115.0K/W
Pin Count: 4.0Pins
Ptot: NoneW
VDS: NoneV
Package: SOT-223
Polarity: P
Mounting: SMD
Mode: Enhancement
Ciss: 210.0pF
Coss: 30.0pF
Special Features: Small Power
QG(typ @10V): -11.6nC
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.25