天天芯片 - 物料搜索

BSS806N

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 20 V in SOT-23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 370.0pF Coss: 118.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.05

IRLML0030

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Mounting: SMD Package: SOT-23 Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV VGS: NoneV Moisture Sensitivity Level: 1 Polarity: N Qgd: 1.1nC Tj: None°C RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.7V ID (@25°C): NoneA QG(typ @4.5V): 2.6nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.08

BSP613P

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 100.0K/W Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 715.0pF Coss: 230.0pF Special Features: Small Power QG(typ @10V): 22.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.46

BSP295

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 60 V in SOT-223 package

IDpuls: NoneA VGS(th): NoneV Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 295.0pF Coss: 95.0pF Special Features: Small Power QG(typ @10V): 14.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.28

BSS127

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 600 V in SOT23 package

IDpuls: NoneA VGS(th): NoneV RthJC: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 21.0pF Coss: 2.4pF Special Features: Small Signal QG(typ @10V): 0.65nC RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSP125

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-Channel Small Signal MOSFET 600 V in SOT223 package

VDS: NoneV IDpuls: NoneA VGS(th): NoneV RthJC: NoneK/W Pin Count: 4.0Pins Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 100.0pF Coss: 8.2pF Special Features: Small Power QG(typ @10V): 4.4nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.26 Budgetary Price €/1k: 0.22

BSS139

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

IDpuls: NoneA VGS(th): -1.4V RthJC: NoneK/W Operating Temperature: None°C Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV QG(typ @4.5V): 2.3nC ID (@25°C): NoneA Package: SOT-23 Mounting: SMD Mode: Depletion Ciss: 60.0pF Coss: 6.7pF RDS (on)(@10V): NonemΩ Special Features: Depletion mode Polarity: N RDS (on)(@0V): 30000.0mΩ Budgetary Price €/1k: 0.1

BSP135I

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N-channel depletion mode small-signal MOSFET for industrial and consumer applications in SOT-223 package

IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Pin Count: 4.0Pins Polarity: N QG(typ @4.5V): 3.7nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): -1.4V ID (@25°C): NoneA Special Features: Depletion mode RDS (on)(@0V): 60000.0mΩ Budgetary Price €/1k: 0.32

ISP650P06NM

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -39.0nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Power Budgetary Price €/1k: 0.47

ISS55EP06LM

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Polarity: P QG(typ @10V): -0.59nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VDS: NoneV Special Features: Small Signal VGS(th): -1.5V Budgetary Price €/1k: 0.03