BSR315P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SC-59
Rth: 250.0K/W
Ptot: NoneW
VDS: NoneV
VGS(th): NoneV
Operating Temperature: None°C
IDpuls: NoneA
Mounting: SMD
Mode: enhancement
Package: SC59
Polarity: P
Ciss: 132.0pF
Coss: 42.0pF
Special Features: Small Signal
QG(typ @10V): 4.0nC
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
Budgetary Price €/1k: 0.13
IRLML9301
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package
Mounting: SMD
Package: SOT-23
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
VGS: NoneV
Moisture Sensitivity Level: 1
Polarity: P
Qgd: 2.5nC
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): -1.85V
ID (@25°C): NoneA
QG(typ @4.5V): 4.8nC
Special Features: Small Power
Budgetary Price €/1k: 0.07
VDS: NoneV
VDS: NoneV
Ptot: NoneW
IDpuls: NoneA
IDpuls: NoneA
VGS(th): NoneV
VGS(th): NoneV
Pin Count: 6.0Pins
Package: TSOP-6
Mounting: SMD
Mode: Enhancement
Ciss: 212.0pF
Ciss: 71.0pF
Coss: 26.0pF
Coss: 69.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
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Polarity: N+P
Special Features: Complimentary
VGS(th): -1.5V
VGS(th): 1.6V
Budgetary Price €/1k: 0.12
BSS139I
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package
ID (@25°C): NoneA
IDpuls: NoneA
Mounting: SMT
Operating Temperature: None°C
Ptot: NoneW
Package: SOT-23
Pin Count: 3.0Pins
Polarity: N
QG(typ @4.5V): 2.3nC
RDS (on)(@10V): NonemΩ
VDS: NoneV
VGS(th): -1.4V
Special Features: Depletion mode
RDS (on)(@0V): 30000.0mΩ
Budgetary Price €/1k: 0.08
BSL308PE
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, TSOP-6
VDS: NoneV
Ptot: NoneW
IDpuls: NoneA
VGS(th): NoneV
Rth: 250.0K/W
RthJA: NoneK/W
Pin Count: 6.0Pins
Package: TSOP-6 dual
Polarity: P
Mounting: SMD
Mode: Enhancement
Ciss: 376.0pF
Coss: 196.0pF
QG(typ @10V): -5.0nC
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
Operating Temperature: None°C
Special Features: ESD protected
VGS(th): -1.5V
Budgetary Price €/1k: 0.17
BSS119N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 100 V in SOT23 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
Package: SOT-23
Ciss: 15.7pF
Coss: 3.4pF
Special Features: Small Signal
QG(typ @10V): 0.6nC
RDS (on)(@10V): NonemΩ
Polarity: N
ID (@25°C): NoneA
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.06
BSS306N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 30 V in SOT-23 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
Package: SOT-23
Ciss: 207.0pF
Coss: 75.0pF
Special Features: Small Signal
RDS (on)(@10V): NonemΩ
Polarity: N
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.06
BSS315P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23
IDpuls: NoneA
VGS(th): NoneV
Rth: 250.0K/W
Ptot: NoneW
VDS: NoneV
Package: SOT-23
Ciss: 212.0pF
Coss: 69.0pF
RDS (on): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Special Features: Small Signal
Polarity: P
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.06
ISS17EP06LM
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications
ID (@25°C): NoneA
IDpuls: NoneA
Operating Temperature: None°C
Ptot: NoneW
Package: SOT-23
Polarity: P
QG(typ @10V): -1.79nC
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VDS: NoneV
Special Features: Small Signal
VGS(th): -1.5V
Budgetary Price €/1k: 0.05
IRLML6346
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package
Mounting: SMD
Package: SOT-23
Ptot(@ TA=25°C): NoneW
Tj: None°C
VGS: NoneV
Moisture Sensitivity Level: 1
Polarity: N
Qgd: 1.1nC
RthJA: NoneK/W
VDS: NoneV
RDS (on)(@4.5V): NonemΩ
VGS(th): 0.8V
ID (@25°C): NoneA
QG(typ @4.5V): 2.9nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.06