IRF9389
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P-Channel StrongIRFET™ Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 0.98nC
R[thJA] max: 62.5K/W
V[DS] max: 30.0V
V[GS] max: 20.0V
Package: SO-8
Q[gd](typ): 2.1nC
T[j] max: 150.0°C
R[DS (on)](@10V) max: 27.0mΩ
R[DS (on)](@10V) max: 64.0mΩ
R[DS (on)](@4.5V) max: 40.0mΩ
R[DS (on)](@4.5V) max: 103.0mΩ
Q[G](typ @10V): 6.8nC
Q[G](typ @10V): 8.1nC
V[GS(th)]: -1.8V
V[GS(th)]: 1.8V
I[D ](@25°C) max: 6.8A
I[D ](@25°C) max: -4.6A
Budgetary Price €/1k: 0.14
I[D ](@25°C) max: 50.0A
I[D ](@25°C) max: 50.0A
I[Dpuls] max: 160.0A
Mounting: SMD
P[tot] max: 2.5W
P[tot] max: 2.5W
Pin Count: 8.0Pins
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 16.0nC
R[th] max: 4.3K/W
R[th] max: 1.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 4.3K/W
R[thJC] max: 1.8K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2300.0pF
C[iss]: 770.0pF
C[oss]: 1400.0pF
更多
C[oss]: 390.0pF
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.2mΩ
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.2mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.87
IRF9358
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: P+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 8.9nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Package: SO-8
R[thJA] max: 62.5K/W
V[DS] max: -30.0V
R[DS (on)](@10V) max: 16.3mΩ
R[DS (on)](@4.5V) max: 23.8mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -9.2A
Q[G](typ @4.5V): 19.0nC
Budgetary Price €/1k: 0.39
I[D ](@25°C) max: 42.0A
I[D ](@ T[C]=25°C) max: 42.0A
I[Dpuls] max: 168.0A
Mounting: SMT
P[tot] max: 50.0W
Polarity: N+N
Q[G](typ @10V): 21.0nC
R[DS (on)](@10V) max: 15.5mΩ
V[DS] max: 60.0V
Package: SuperSO8 5x6
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.38
IRFI4212H-117P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package
P[tot](@ T[A]=25°C) max: 18.0W
Q[gd](typ): 6.2nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Polarity: N+N
R[thJA] max: 65.0K/W
V[DS] max: 100.0V
Package: TO-220 FullPAK
R[DS (on)](@10V) max: 72.5mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 12.0nC
I[D ](@25°C) max: 11.0A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.69
I[D ](@25°C) max: 20.0A
I[D ](@ T[C]=25°C) max: 20.0A
I[Dpuls] max: 80.0A
Mounting: SMT
P[tot] max: 65.0W
Polarity: N+N
Q[G](typ @10V): 39.0nC
R[DS (on)](@10V) max: 7.2mΩ
R[DS (on)](@4.5V) max: 9.2mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.51
I[D ](@25°C) max: 20.0A
I[D ](@ T[C]=25°C) max: 20.0A
I[Dpuls] max: 80.0A
Mounting: SMT
P[tot] max: 65.0W
Polarity: N+N
Q[G](typ @10V): 28.0nC
R[DS (on)](@10V) max: 7.6mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.48
I[Dpuls] max: 65.0A
R[th]: 50.0K/W
P[tot] max: 2.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 6.1nC
I[D ](@25°C) max: 9.3A
Polarity: N+N
C[iss]: 970.0pF
C[oss]: 340.0pF
Q[G](typ @10V): 12.6nC
R[DS (on)](@10V) max: 15.0mΩ
R[DS (on)](@4.5V) max: 18.2mΩ
R[DS (on)](@4.5V LL) max: 18.2mΩ
Package: SO-8
V[GS(th)]: 1.57V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.32
I[D ](@25°C) max: 7.7A
I[Dpuls] max: 54.0A
R[th]: 50.0K/W
P[tot] max: 2.0W
V[DS] max: 30.0V
Q[G](typ @10V): 7.8nC
Polarity: N+N
C[iss]: 600.0pF
C[oss]: 230.0pF
Q[G](typ @4.5V): 3.8nC
R[DS (on)](@10V) max: 22.0mΩ
R[DS (on)](@4.5V) max: 27.0mΩ
R[DS (on)](@4.5V LL) max: 27.0mΩ
Package: SO-8
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.24
IRF7309
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Package: SO-8
Polarity: N+P
P[tot](@ T[A]=25°C) max: 1.4W
Q[gd](typ): 5.3nC
R[thJA] max: 90.0K/W
T[j] max: 150.0°C
V[DS] max: 30.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Q[gd](typ): 6.0nC
R[DS (on)](@10V) max: 50.0mΩ
R[DS (on)](@10V) max: 100.0mΩ
R[DS (on)](@4.5V) max: 80.0mΩ
R[DS (on)](@4.5V) max: 160.0mΩ
V[GS(th)] min: -1.0V
V[GS(th)] min: 1.0V
I[D ](@25°C) max: 4.0A
I[D ](@25°C) max: -3.0A
Q[G](typ @4.5V): 16.7nC
Q[G](typ @4.5V): 16.7nC
更多
V[DS] max: -30.0V
Budgetary Price €/1k: 0.22