BSO201SPH
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
I[Dpuls] max: -59.6A
R[th]: 110.0K/W
P[tot] max: 2.5W
V[DS] max: -20.0V
Package: SO-8
C[iss]: 6400.0pF
C[oss]: 2100.0pF
R[DS (on)](@2.5V) max: 12.9mΩ
R[DS (on)](@4.5V) max: 8.0mΩ
R[DS (on)](@4.5V LL) max: 8.0mΩ
V[GS(th)]: -0.9V
I[D ](@25°C) max: 14.9A
Q[G](typ @4.5V) max: 66.0nC
Polarity: P
Operating Temperature min: -55.0°C
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.55
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: P
Q[gd]: 25.0nC
T[j] max: 150.0°C
V[GS] max: 8.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: -12.0V
R[DS (on)](@4.5V) max: 7.0mΩ
V[GS(th)]: -0.65V
I[D ](@25°C) max: -16.0A
Q[G](typ @4.5V): 91.0nC
Budgetary Price €/1k: 0.36
I[Dpuls] max: 160.0A
V[GS(th)] max: 2.0V
V[GS(th)] max: 1.0V
R[th]: 4.5K/W
R[th]: 1.5K/W
P[tot] max: 2.5W
P[tot] max: 2.5W
V[DS] max: 25.0V
V[DS] max: 25.0V
Q[G](typ @4.5V): 5.0nC
Q[G](typ @4.5V): 23.0nC
I[D ](@25°C) max: 22.0A
I[D ](@25°C) max: 11.0A
Polarity: N+N
C[iss]: 3400.0pF
C[iss]: 760.0pF
C[oss]: 1700.0pF
C[oss]: 370.0pF
R[DS (on)](@10V) max: 1.2mΩ
R[DS (on)](@10V) max: 4.6mΩ
更多
R[DS (on)](@4.5V) max: 1.6mΩ
R[DS (on)](@4.5V) max: 5.9mΩ
R[DS (on)](@4.5V LL) max: 1.6mΩ
R[DS (on)](@4.5V LL) max: 5.9mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: Asymmetrical Dual 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.71
IRLHS6376
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 1.5W
Polarity: N+N
Q[gd](typ): 1.1nC
R[thJA] max: 86.0K/W
T[j] max: 150.0°C
V[DS] max: 30.0V
V[GS] max: 12.0V
R[DS (on)](@4.5V) max: 63.0mΩ
V[GS(th)]: 0.8V
I[D ](@25°C) max: 7.6A
Q[G](typ @4.5V): 2.8nC
Operating Temperature max: 150.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.13
I[Dpuls] max: 160.0A
R[th]: 4.5K/W
R[th]: 1.7K/W
P[tot] max: 2.5W
P[tot] max: 2.5W
V[DS] max: 30.0V
V[DS] max: 30.0V
Q[G](typ @4.5V): 5.9nC
Q[G](typ @4.5V): 22.0nC
I[D ](@25°C) max: 19.0A
I[D ](@25°C) max: 11.0A
Polarity: N+N
C[iss]: 2700.0pF
C[iss]: 770.0pF
C[oss]: 1100.0pF
C[oss]: 300.0pF
R[DS (on)](@10V) max: 1.5mΩ
R[DS (on)](@10V) max: 5.0mΩ
R[DS (on)](@4.5V) max: 2.1mΩ
R[DS (on)](@4.5V) max: 7.0mΩ
更多
R[DS (on)](@4.5V LL) max: 2.1mΩ
R[DS (on)](@4.5V LL) max: 7.0mΩ
Package: Asymmetrical Dual 5x6
V[GS(th)]: 1.62V
V[GS(th)]: 1.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.56
V[DS] max: -20.0V
P[tot] max: 2.5W
I[Dpuls] max: -13.0A
V[GS(th)] max: -0.7V
V[GS(th)] max: 1.4V
R[th]: 8.0K/W
R[thJC] max: 8.0K/W
R[thJA] max: 60.0K/W
Operating Temperature max: 175.0°C
Pin Count: 8.0Pins
Mounting: SMD
Mode: Enhancement
I[Dpuls] max: 20.0A
V[DS] max: 20.0V
C[iss]: 270.0pF
C[iss]: 315.0pF
C[oss]: 110.0pF
C[oss]: 114.0pF
Package: PQFN 3.3 x 3.3
R[DS (on)](@4.5V) max: 55.0mΩ
更多
R[DS (on)](@4.5V) max: 150.0mΩ
I[D ](@25°C) max: 3.2A
I[D ](@25°C) max: 5.1A
Q[G](typ @4.5V) max: 3.0nC
Polarity: N+P
Budgetary Price €/1k: 0.39
BSG0812ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 25 V Power Block in 5x6 mm²
I[D ](@25°C) max: 18.0A
I[D ](@25°C) max: 37.0A
Operating Temperature max: 150.0°C
Package: Power Block 5x6
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 20.0nC
R[DS (on)](@10V) max: 3.5mΩ
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@4.5V) max: 4.6mΩ
R[DS (on)](@4.5V) max: 1.3mΩ
V[DS] max: 25.0V
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.63
I[D ](@25°C) max: 50.0A
I[D ](@25°C) max: 50.0A
I[Dpuls] max: 160.0A
P[tot] max: 2.5W
P[tot] max: 2.5W
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 15.0nC
R[th]: 4.3K/W
R[th]: 2.2K/W
R[thJA] max: 50.0K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2200.0pF
C[iss]: 780.0pF
C[oss]: 1300.0pF
C[oss]: 390.0pF
R[DS (on)](@10V) max: 1.2mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.7mΩ
更多
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.7mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.73
IRF7351
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N+N
Q[gd](typ): 7.2nC
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[DS] max: 60.0V
V[GS] max: 20.0V
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
R[DS (on)](@10V) max: 17.8mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 24.0nC
I[D ](@25°C) max: 8.0A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43
I[D ](@25°C) max: 19.0A
I[D ](@25°C) max: 41.0A
I[Dpuls] max: 160.0A
P[tot] max: 2.5W
P[tot] max: 2.5W
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 20.0nC
R[th]: 4.3K/W
R[th]: 1.8K/W
R[thJA] max: 50.0K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2700.0pF
C[iss]: 780.0pF
C[oss]: 1400.0pF
C[oss]: 390.0pF
R[DS (on)](@10V) max: 0.8mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.1mΩ
更多
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.1mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.74