ISC037N13NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package

I[D ](@25°C) max: 172.0A Operating Temperature max: 175.0°C Package: SuperSO8 5x6 Polarity: N Q[G](typ @10V): 82.0nC R[DS (on)](@10V) max: 3.7mΩ V[DS] max: 135.0V V[GS(th)]: 3.0V Special Features: Fused leads Budgetary Price €/1k: 1.78

BSC110N15NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 77.0A I[Dpuls] max: 308.0A Operating Temperature max: 175.0°C P[tot] max: 150.0W Package: SuperSO8 5x6 DSC Polarity: N Q[G](typ @10V): 28.0nC R[DS (on)](@10V) max: 11.0mΩ V[DS] max: 150.0V V[GS(th)]: 3.8V Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.53

BSC070N10NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 82.0A I[Dpuls] max: 328.0A Mounting: SMT P[tot] max: 100.0W Polarity: N Q[G](typ @10V): 30.0nC R[DS (on)](@10V) max: 7.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Package: SuperSO8 5x6 DSC Operating Temperature max: 175.0°C Special Features: Dual-Side Cooling Budgetary Price €/1k: 0.92
I[Dpuls] max: 44.0A R[th]: 2.0K/W P[tot] max: 62.5W V[DS] max: 250.0V Q[G](typ @10V): 8.6nC Polarity: N C[iss]: 690.0pF C[oss]: 44.0pF R[DS (on)](@10V) max: 165.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 10.9A V[GS(th)]: 3.0V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.65

BSC030N10NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs 100 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 171.0A I[Dpuls] max: 684.0A Operating Temperature max: 175.0°C P[tot] max: 188.0W Package: SuperSO8 5x6 DSC Polarity: N Q[G](typ @10V): 70.0nC R[DS (on)](@10V) max: 3.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.4

BSC040N10NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 140.0A I[Dpuls] max: 560.0A Mounting: SMT P[tot] max: 167.0W Polarity: N Q[G](typ @10V): 58.0nC R[DS (on)](@10V) max: 4.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Package: SuperSO8 5x6 DSC Operating Temperature max: 175.0°C Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.34
I[Dpuls] max: 224.0A Mounting: SMD P[tot] max: 96.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 19.0nC Q[gd]: 4.0nC R[th]: 1.3K/W R[thJA] max: 50.0K/W R[thJC] max: 1.3K/W V[DS] max: 150.0V C[iss]: 1370.0pF C[oss]: 341.0pF R[DS (on)](@10V) max: 16.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 56.0A V[GS(th)]: 3.8V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.9

BSC160N15NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 56.0A I[Dpuls] max: 224.0A Operating Temperature max: 175.0°C P[tot] max: 115.0W Package: SuperSO8 5x6 DSC Polarity: N Q[G](typ @10V): 19.0nC R[DS (on)](@10V) max: 16.0mΩ V[DS] max: 150.0V V[GS(th)]: 3.8V Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.14

ISC151N20NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package

I[D ](@25°C) max: 74.0A Operating Temperature max: 175.0°C Package: SuperSO8 5x6 FL Polarity: N Q[G](typ @10V): 31.0nC R[DS (on)](@10V) max: 15.1mΩ V[DS] max: 200.0V V[GS(th)]: 3.7V Special Features: Fused leads Budgetary Price €/1k: 2.07

ISC037N12NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package

I[D ](@25°C) max: 163.0A I[Dpuls] max: 652.0A Operating Temperature max: 175.0°C P[tot] max: 214.0W Package: SuperSO8 5x6 FL Polarity: N Q[G](typ @10V): 46.0nC R[DS (on)](@10V) max: 3.7mΩ V[DS] max: 120.0V V[GS(th)]: 3.1V Battery voltage: 48-72 V Special Features: Fused leads Budgetary Price €/1k: 1.35