IRFB4332
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 250V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 390.0W
Q[gd]: 35.0nC
R[thJC] max: 0.38K/W
T[j] max: 175.0°C
V[DS] max: 250.0V
V[GS] max: 30.0V
Mounting: THT
R[DS (on)](@10V) max: 33.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 99.0nC
I[D ](@25°C) max: 60.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.29
IPP030N10N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100 V in a TO-220 package
I[Dpuls] max: 480.0A
Mounting: THT
P[tot] max: 250.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 112.0nC
R[th]: 0.6K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.6K/W
V[DS] max: 100.0V
C[iss]: 7920.0pF
C[oss]: 1210.0pF
R[DS (on)](@10V) max: 3.0mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.92
BSC105N15LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 150 V logic level in SuperSO8
I[D ](@25°C) max: 76.0A
Operating Temperature max: 150.0°C
Package: SuperSO8 5x6
Polarity: N
Q[G](typ @10V): 34.0nC
Q[G](typ @4.5V): 18.1nC
R[DS (on)](@10V) max: 10.5mΩ
R[DS (on)](@4.5V) max: 14.0mΩ
V[DS] max: 150.0V
V[GS(th)]: 1.8V
Budgetary Price €/1k: 0.88
IRFB4020
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Digital Audio Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
R[thJC] max: 1.43K/W
V[GS] max: 20.0V
P[tot] max: 100.0W
T[j] max: 175.0°C
Mounting: THT
Q[gd]: 5.3nC
V[DS] max: 200.0V
R[DS (on)](@10V) max: 100.0mΩ
V[GS(th)]: 3.95V
Q[G](typ @10V): 18.0nC
I[D ](@25°C) max: 18.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.47
I[Dpuls] max: 448.0A
Mounting: THT
P[tot] max: 214.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 49.0nC
Q[gd]: 10.0nC
R[th]: 0.7K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.7K/W
V[DS] max: 150.0V
C[iss]: 3600.0pF
C[oss]: 900.0pF
R[DS (on)](@10V) max: 7.6mΩ
I[D ](@25°C) max: 112.0A
V[GS(th)]: 3.8V
Operating Temperature max: 175.0°C
Battery voltage: 72-96 V
Budgetary Price €/1k: 1.13
BSC093N15NS5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 89.0A
I[Dpuls] max: 356.0A
Operating Temperature max: 175.0°C
P[tot] max: 167.0W
Package: SuperSO8 5x6 DSC
Polarity: N
Q[G](typ @10V): 33.0nC
R[DS (on)](@10V) max: 9.3mΩ
V[DS] max: 150.0V
V[GS(th)]: 3.8V
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.55
IRFB4127
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 375.0W
Q[gd]: 31.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 0.4K/W
V[DS] max: 200.0V
R[DS (on)](@10V) max: 20.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 100.0nC
I[D ](@25°C) max: 76.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.2
IPP082N10NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package
I[D ](@25°C) max: 77.0A
I[Dpuls] max: 308.0A
Mounting: THT
P[tot] max: 100.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 28.0nC
R[DS (on)](@10V) max: 8.2mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 48-72 V
Budgetary Price €/1k: 0.59
I[Dpuls] max: 100.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 250.0V
Q[G](typ @10V): 22.0nC
Package: TO-220
Polarity: N
C[iss]: 1770.0pF
C[oss]: 112.0pF
R[DS (on)](@10V) max: 60.0mΩ
I[D ](@25°C) max: 25.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.09
IRLB4030
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 370.0W
Q[gd]: 45.0nC
T[j] max: 175.0°C
V[DS] max: 100.0V
Mounting: THT
R[thJC] max: 0.4K/W
V[GS] max: 16.0V
R[DS (on)](@10V) max: 4.3mΩ
R[DS (on)](@4.5V) max: 4.5mΩ
V[GS(th)]: 1.75V
I[D ](@25°C) max: 180.0A
Q[G](typ @4.5V): 87.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.21