IPTC019N10NM5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance

I[D ](@25°C) max: 279.0A I[Dpuls] max: 1116.0A Mounting: SMT P[tot] max: 300.0W Package: TOLT (HDSOP-16) Pin Count: 16.0Pins Polarity: N Q[G](typ @10V): 128.0nC R[DS (on)](@10V) max: 1.9mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.74

IRF1310NS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Mounting: SMD P[tot] max: 3.8W V[GS] max: 20.0V Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Q[gd]: 38.7nC R[thJC] max: 0.95K/W T[j] max: 175.0°C V[DS] max: 100.0V R[DS (on)](@10V) max: 36.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 73.3nC I[D ](@25°C) max: 42.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.55

IPB110N20N3LF


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: Combining a low RDS(on) with a wide safe operating area (SOA)

IDpuls: NoneA Mounting: SMD Ptot: NoneW Package: D2PAK (TO-263) Pin Count: 3.0Pins Polarity: N QG(typ @10V): 76.0nC Qgd: 51.0nC Rth: 0.3K/W RthJA: NoneK/W RthJC: NoneK/W VDS: NoneV Special Features: Wide SOA RDS (on)(@10V): NonemΩ ID (@25°C): NoneA VGS(th): 3.2V Operating Temperature: None°C Budgetary Price €/1k: 3.85

IRFS4321


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Mounting: SMD Package: D2PAK (TO-263) P[tot] max: 330.0W Q[gd]: 21.0nC T[j] max: 175.0°C V[GS] max: 30.0V Moisture Sensitivity Level: 1 Polarity: N R[thJC] max: 0.45K/W V[DS] max: 150.0V R[DS (on)](@10V) max: 15.0mΩ V[GS(th)]: 4.0V Q[G](typ @10V): 71.0nC I[D ](@25°C) max: 85.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.18
Mounting: SMD Package: D2PAK (TO-263) P[tot] max: 3.8W Q[gd]: 28.0nC T[j] max: 175.0°C V[DS] max: 100.0V Moisture Sensitivity Level: 1 Polarity: N R[thJC] max: 0.75K/W V[GS] max: 20.0V R[DS (on)](@10V) max: 23.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 86.7nC I[D ](@25°C) max: 57.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.53

IRFS4227


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot] max: 330.0W R[thJC] max: 0.45K/W V[DS] max: 200.0V V[GS] max: 30.0V Package: D2PAK (TO-263) Q[gd]: 23.0nC T[j] max: 175.0°C R[DS (on)](@10V) max: 26.0mΩ V[GS(th)]: 4.0V Q[G](typ @10V): 70.0nC I[D ](@25°C) max: 62.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.93
I[Dpuls] max: 352.0A R[th]: 0.5K/W P[tot] max: 300.0W V[DS] max: 200.0V Q[G](typ @10V): 65.0nC Package: D2PAK (TO-263) Polarity: N C[iss]: 5340.0pF C[oss]: 401.0pF R[DS (on)](@10V) max: 10.7mΩ I[D ](@25°C) max: 88.0A V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Battery voltage: 96-140 V Budgetary Price €/1k: 2.33

IRF3415S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Moisture Sensitivity Level: 1 P[tot] max: 3.8W Q[gd]: 65.3nC T[j] max: 175.0°C Mounting: SMD Package: D2PAK (TO-263) Polarity: N R[thJC] max: 0.75K/W V[DS] max: 150.0V V[GS] max: 20.0V R[DS (on)](@10V) max: 42.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 133.3nC I[D ](@25°C) max: 43.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.73

IRFS38N20D


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 200V Single N-Channel IR MOSFET in a D2-Pak package

Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Q[gd]: 28.0nC T[j] max: 175.0°C V[GS] max: 30.0V Mounting: SMD P[tot] max: 320.0W R[thJC] max: 0.47K/W V[DS] max: 200.0V R[DS (on)](@10V) max: 54.0mΩ V[GS(th)]: 4.0V Q[G](typ @10V): 60.0nC I[D ](@25°C) max: 43.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.95

IRF530NS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 100V Single N-Channel IR MOSFET in a D2-Pak package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot] max: 3.8W R[thJC] max: 1.9K/W V[DS] max: 100.0V V[GS] max: 20.0V Package: D2PAK (TO-263) Q[gd]: 4.8nC T[j] max: 175.0°C R[DS (on)](@10V) max: 90.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 24.7nC I[D ](@25°C) max: 17.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.3