IRFB4310
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 300.0W
Q[gd]: 62.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 0.45K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 7.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 170.0nC
I[D ](@25°C) max: 130.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.09
IRF100B202
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 221.0W
Q[gd]: 23.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 0.68K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 8.6mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 77.0nC
I[D ](@25°C) max: 97.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.6
IRFB38N20D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 320.0W
R[thJC] max: 0.47K/W
V[DS] max: 200.0V
V[GS] max: 30.0V
Polarity: N
Q[gd]: 28.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 54.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 60.0nC
I[D ](@25°C) max: 43.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.89
I[Dpuls] max: 352.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 200.0V
Q[G](typ @10V): 65.0nC
Package: TO-220
Polarity: N
C[iss]: 5340.0pF
C[oss]: 401.0pF
R[DS (on)](@10V) max: 11.0mΩ
I[D ](@25°C) max: 88.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.79
IRF3415
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel Power MOSFET in a TO-220 package
Polarity: N
R[thJC] max: 0.75K/W
V[DS] max: 150.0V
Mounting: THT
Package: TO-220
P[tot] max: 200.0W
Q[gd]: 65.3nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 42.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 133.3nC
I[D ](@25°C) max: 43.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.75
I[Dpuls] max: 480.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 120.0V
Q[G](typ @10V): 158.0nC
Package: TO-220
Polarity: N
C[iss]: 10400.0pF
C[oss]: 1320.0pF
R[DS (on)](@10V) max: 4.1mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.83
I[Dpuls] max: 224.0A
R[th]: 1.4K/W
P[tot] max: 107.0W
V[DS] max: 120.0V
Q[G](typ @10V): 37.0nC
I[D ](@25°C) max: 56.0A
Package: TO-220
Polarity: N
C[iss]: 2420.0pF
C[oss]: 304.0pF
R[DS (on)](@10V) max: 14.7mΩ
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.53
IRFB4510
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Package: TO-220
Q[gd]: 18.0nC
T[j] max: 175.0°C
Mounting: THT
Polarity: N
P[tot] max: 140.0W
R[thJC] max: 1.05K/W
V[DS] max: 100.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 13.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 58.0nC
I[D ](@25°C) max: 62.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.52
I[Dpuls] max: 252.0A
R[th]: 1.5K/W
P[tot] max: 78.0W
V[DS] max: 100.0V
Q[G](typ @10V): 26.0nC
Polarity: N
C[iss]: 1900.0pF
C[oss]: 330.0pF
R[DS (on)](@10V) max: 10.9mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 63.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.53
I[Dpuls] max: 200.0A
R[th]: 1.0K/W
P[tot] max: 150.0W
V[DS] max: 150.0V
Q[G](typ @10V): 23.0nC
Package: TO-220
Polarity: N
C[iss]: 1820.0pF
C[oss]: 214.0pF
R[DS (on)](@10V) max: 20.0mΩ
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.0