I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 120.0V
Q[G](typ @10V): 137.0nC
Package: TO-220
Polarity: N
C[iss]: 9030.0pF
C[oss]: 1150.0pF
R[DS (on)](@10V) max: 4.8mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.63
IRF1310N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
Polarity: N
Q[gd]: 38.7nC
T[j] max: 175.0°C
V[DS] max: 100.0V
P[tot] max: 160.0W
R[thJC] max: 0.95K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 36.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 73.3nC
I[D ](@25°C) max: 42.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.53
I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 150.0V
Q[G](typ @10V): 70.0nC
Package: TO-220
Polarity: N
C[iss]: 5470.0pF
C[oss]: 638.0pF
R[DS (on)](@10V) max: 7.5mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.28
I[Dpuls] max: 400.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 100.0V
Q[G](typ @10V): 88.0nC
Package: TO-220
Polarity: N
C[iss]: 6320.0pF
C[oss]: 1210.0pF
R[DS (on)](@10V) max: 4.5mΩ
I[D ](@25°C) max: 137.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.97
IRFB52N15D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 320.0W
R[thJC] max: 0.47K/W
V[GS] max: 30.0V
V[DS] max: 150.0V
Mounting: THT
Q[gd]: 28.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 32.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 60.0nC
I[D ](@25°C) max: 51.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.97
IPP083N10N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100 V in a TO-220 package
I[Dpuls] max: 292.0A
Mounting: THT
P[tot] max: 100.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 30.0nC
R[th]: 1.5K/W
R[thJA] max: 62.0K/W
V[DS] max: 100.0V
C[iss]: 2100.0pF
C[oss]: 337.0pF
R[DS (on)](@10V) max: 8.3mΩ
I[D ](@25°C) max: 73.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.68
IRF630N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel MOSFET in a TO-220 package
Package: TO-220
T[j] max: 175.0°C
Mounting: THT
Polarity: N
P[tot] max: 82.0W
Q[gd]: 11.3nC
R[thJC] max: 1.83K/W
V[DS] max: 200.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 300.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 23.3nC
I[D ](@25°C) max: 9.3A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.26
I[Dpuls] max: 300.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 120.0V
Q[G](typ @10V): 49.0nC
Package: TO-220
Polarity: N
C[iss]: 3240.0pF
C[oss]: 408.0pF
R[DS (on)](@10V) max: 11.4mΩ
I[D ](@25°C) max: 75.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.73
IRF520N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 48.0W
Q[gd]: 7.3nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 3.1K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 200.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 16.7nC
I[D ](@25°C) max: 9.7A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.25
IRF540N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Polarity: N
P[tot] max: 140.0W
R[thJC] max: 1.1K/W
V[DS] max: 100.0V
V[GS] max: 20.0V
Package: TO-220
Q[gd]: 14.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 44.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 47.3nC
I[D ](@25°C) max: 33.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.34