FCA20N60
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，TO-3P
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-3PN
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): 5
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 208
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 75
更多
Ciss Typ (pF): 2370
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): -
Coss Typ (pF): 1280
Crss Typ (pF): 95
Package Type: TO-3P-3L
MSL Type: NA
MSL Temp (°C): 0
ON Target: N
Reference Price: $3.1955
FCH041N60F
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，600 V，76 A，41 mΩ，TO-247
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-247
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 41
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 76
PD Max (W): 595
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 277
更多
Ciss Typ (pF): 10800
Qgd Typ @ VGS = 4.5 V (nC): 116
Qrr Typ (nC): 1790
Coss Typ (pF): 324
Crss Typ (pF): 4.5
Package Type: TO-247-3
MSL Type: NA
MSL Temp (°C): 0
ON Target: Yes
参考价格: $5.7034
FCH041N60F-F085
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 600 V、47 A、36 mΩ、TO-247N 沟道 SuperFET™
状态: Lifetime
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-247
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 41
VGS Max (V): ±20
Vgs(th) Max (V): 5
ID Max (A): 76
PD Max (W): 595
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 267
更多
Ciss Typ (pF): 10900
Qgd Typ @ VGS = 4.5 V (nC): 106
Qrr Typ (nC): 1900
Coss Typ (pF): 360
Crss Typ (pF): 4.4
Package Type: TO-247-3
MSL Type: NA
MSL Temp (°C): 0
ON Target: N
Reference Price: $11.5536
FCH041N65EF-F155
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，71 mΩ，TO-247
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-247
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 41
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 76
PD Max (W): 595
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 229
更多
Ciss Typ (pF): 9446
Qgd Typ @ VGS = 4.5 V (nC): 90
Qrr Typ (nC): 1500
Coss Typ (pF): 366
Crss Typ (pF): 35
Package Type: TO-247-3
MSL Type: NA
MSL Temp (°C): 0
ON Target: Yes
参考价格: $8.4739
FCH041N65EFLN4
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L
状态: Obsolete
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-247-4
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 41
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 76
PD Max (W): 595
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 229
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: TO-247 4-LEAD, THIN LEADS
MSL Type: NA
MSL Temp (°C): 0
ON Target: N
Reference Price: Price N/A
FCH041N65EFL4
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 4L
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-247
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 41
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 76
PD Max (W): 595
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 229
更多
Ciss Typ (pF): 9446
Qgd Typ @ VGS = 4.5 V (nC): 90
Qrr Typ (nC): 1500
Coss Typ (pF): 366
Crss Typ (pF): 35
Package Type: TO-247-4
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $8.0892
ATP113-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道，功率 MOSFET，-60V，-35A，29.5mΩ
状态: 生命周期终止
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -60
RDS(on) Max @ VGS = 10 V (mΩ): 29.5
Vgs (V): 20
Vgs(th) Max (V): -2.6
ID Max (A): -35
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 38
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 55
更多
Ciss Typ (pF): 2400
Qgd Typ @ VGS = 4.5 V (nC): 12
Qrr Typ (nC): -
Coss Typ (pF): 250
Crss Typ (pF): 195
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.7293
FDB0300N1007L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，100V，200A，3mΩ
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 3
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 200
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 44
更多
Ciss Typ (pF): 5925
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 128
Coss Typ (pF): 1220
Crss Typ (pF): 42
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: $2.6422
FDB031N08
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 75
RDS(on) Max @ VGS = 10 V (mΩ): 3.1
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 235
PD Max (W): 375
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 169
更多
Ciss Typ (pF): 11400
Qgd Typ @ VGS = 4.5 V (nC): 47
Qrr Typ (nC): 77
Coss Typ (pF): 1360
Crss Typ (pF): 595
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: Price N/A
FDB045AN08A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 75V，80 A，4.5 mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 75
RDS(on) Max @ VGS = 10 V (mΩ): 4.5
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 310
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 92
更多
Ciss Typ (pF): 6600
Qgd Typ @ VGS = 4.5 V (nC): 21
Qrr Typ (nC): 54
Coss Typ (pF): 1000
Crss Typ (pF): 240
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.954