FDB047N10
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 100V，164A，4.7mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 4.7
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 164
PD Max (W): 375
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 160
更多
Ciss Typ (pF): 11500
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 245
Coss Typ (pF): 1120
Crss Typ (pF): 455
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.9737
FDB050AN06A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 Power Trench® MOSFET 60V，80A，5mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 245
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 61
更多
Ciss Typ (pF): 3900
Qgd Typ @ VGS = 4.5 V (nC): 15
Qrr Typ (nC): 25
Coss Typ (pF): 750
Crss Typ (pF): 270
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.1856
FDB060AN08A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，75V，80A，6mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 6
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 255
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 73
更多
Ciss Typ (pF): 5150
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 38
Coss Typ (pF): 800
Crss Typ (pF): 230
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $1.8142
FDB0630N1507L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，150V，130A，6.4mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 150
RDS(on) Max @ VGS = 10 V (mΩ): 6.4
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 130
PD Max (W): 300
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 97
更多
Ciss Typ (pF): 7065
Qgd Typ @ VGS = 4.5 V (nC): 17
Qrr Typ (nC): 229
Coss Typ (pF): 552
Crss Typ (pF): 27
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $3.1165
FDB0690N1507L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，150V，115A，6.9mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 150
RDS(on) Max @ VGS = 10 V (mΩ): 6.9
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 115
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 82
更多
Ciss Typ (pF): 6265
Qgd Typ @ VGS = 4.5 V (nC): 15
Qrr Typ (nC): 226
Coss Typ (pF): 502
Crss Typ (pF): 25
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: $2.451
FDB070AN06A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 Power Trench® MOSFET 60V，80A，7mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 7
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 175
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 51
更多
Ciss Typ (pF): 3000
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 35
Coss Typ (pF): 510
Crss Typ (pF): 230
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $1.6222
2N7000-D74Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-92
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92-3 LF
MSL Type: NA
MSL Temp (°C): 0
ON Target: N
Reference Price: $0.1033
2N7002L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道小信号 MOSFET 60V，115mA，7.5 Ω
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 7500
VGS Max (V): ±20
Vgs(th) Max (V): 2.5
Id Max (A): 0.115
PD Max (W): 0.225
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 50
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.028
2N7002LT7G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: SOT23，N沟道MOSFET - 60V 115MA 7.5Ohm
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 7500
VGS Max (V): 20
Vgs(th) Max (V): 2.5
Id Max (A): 0.115
PD Max (W): 0.225
RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~
RDS(on) Max @ VGS = 4.5 V (mΩ): 7500
Qg Typ @ VGS = 4.5 V (nC): ~NA~
Qg Typ @ VGS = 10 V (nC): ~NA~
更多
Ciss Typ (pF): 50
Qgd Typ @ VGS = 4.5 V (nC): ~NA~
Qrr Typ (nC): ~NA~
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.0245
2N7002T
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道增强型场效应晶体管 60V，115mA，2Ω
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SC-3
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 2000
VGS Max (V): ±20
Vgs(th) Max (V): 2
Id Max (A): 0.115
PD Max (W): 0.2
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 37.8
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 12.4
Crss Typ (pF): 6.5
Package Type: SOT-523FL
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.0709