状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SC-6
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2000
VGS Max (V): ±20
Vgs(th) Max (V): 2.5
Id Max (A): 0.28
PD Max (W): 0.25
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 37.8
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 12.4
Crss Typ (pF): 6.5
Package Type: SOT-563
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.1319
2N7002VA
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道增强型场效应晶体管 60V，0.28A，2Ω
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SC-6
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2000
VGS Max (V): ±20
Vgs(th) Max (V): 2.5
Id Max (A): 0.28
PD Max (W): 0.25
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 37.8
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 12.4
Crss Typ (pF): 6.5
Package Type: SOT-563
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.2783
FTCO3V455A2
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 汽车功率集成模块 （PIM）MOSFET 40V，150A
状态: Active
Compliance: Pb A H P
Configuration: 3-phase Inverter with Sense Resistor
VBR Max (V): 40
RDS(on) Max (mΩ): 1.66
Package Type: 19LD APM PDD STD
MSL Type: NA
MSL Temp (°C): 0
ON Target: N
Reference Price: Price N/A
状态: Active
Compliance: Pb A H P
Configuration: 3-phase Inverter with Sense Resistor
VBR Max (V): 40
RDS(on) Max (mΩ): 1.2
Package Type: 19LD, APM, PDD STD (APM19-CBC)
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $18.5982
状态: Product Preview
Compliance: Pb A H P
Configuration: Half-Bridge
VBR Max (V): 1200
RDS(on) Typ (mΩ): 2.6
Application: Automotive Traction Inverter
Package Type: AHPM15−CDE AUTOMOTIVE MODULE
MSL Type: NA
MSL Temp (°C): 0
ON Target: F
Reference Price: Price N/A
状态: Active
Compliance: Pb A H P
Configuration: Two Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 40
Application: Solar Inverter, Energy Infrastructure
Package Type: Q0
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $62.829
状态: Active
Compliance: Pb A H P
Configuration: Three Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 40
Application: Solar Inverter, Energy Infrastructure
Package Type: Q1
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $81.5478
状态: Active
Compliance: Pb A H P
Configuration: Two Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 80
Application: Solar Inverter, Energy Infrastructure
Package Type: Q0
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $47.7349
Configuration: Discrete
I[D ](@100°C) max: -0.33A
I[D ](@25°C) max: -0.53A
V[F] max: -5.0V
Package: UB
Polarity: P
V[BRDSS] min: -60.0V
QPL Part Number: 2N7626UB
TID max: 100.0Krad(Si)
ESD Class: Class 0
R[DS (on)](@25°C) max: 1300.0mΩ
Generation: R7
Optional TID Rating(kRad(si)): 100 300
Qualification: DLA
Q[G]: 3.6nC
Die Size: 2
Language: SPICE
Voltage Class: 100.0V
Product Category: Rad hard MOSFETS
IPT010N08NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Single N-Channel OptiMOS™ 5 power MOSFET 80V 1.05mΩ 425A in a TOLL package
I[D ](@25°C) max: 425.0A
I[D ] max: 425.0A
I[Dpuls] max: 1700.0A
Mounting: SMT
P[tot] max: 375.0W
Package: TOLL (HSOF-8)
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 178.0nC
Q[G]: 178.0nC
R[DS (on)](@10V) max: 1.05mΩ
R[DS (on)] max: 1.05mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 2.89