IGLD60R190D1S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 3.2nC
VDS: NoneV
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
GS-065-004-1-L-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 0.8nC
RDS (on)(typ): 450.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
IGI60F5050A1L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution
QG: 0.58nC
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 500.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
IGLD60R190D1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
Package: LSON-8-1
Polarity: N
QG: 3.2nC
VDS: NoneV
VGS(th): 1.2V
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 140.0mΩ
Generation: G5
RDS (on): NonemΩ