Output swing headroom (to positive supply) (typ) (V): -0.005 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.09 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.0029 Vn at 1 kHz (typ) (nV√Hz): 80 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2.7 Features: EMI Hardened Input bias current (max) (pA): 50 CMRR (typ) (dB): 100 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.0055 Input common mode headroom (to positive supply) (typ) (V): 0.0029 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 50 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 25 Vn at flatband (typ) (nV√Hz): 4.5 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 Rail-to-rail: In, Out Features: Zero Crossover Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 120 Input bias current (max) (pA): 10 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 65

Rating: Catalog Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 BW at Acl (MHz): 620 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 570 Architecture: Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz): 2 Iq per channel (typ) (mA): 14.2 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 2.5 Operating temperature range (°C): -40 to 85 Iout (typ) (mA): 105 2nd harmonic (dBc): 115 3rd harmonic (dBc): 123 Frequency of harmonic distortion measurement (MHz): 0.1 GBW (typ) (MHz): 1200 Input bias current (max) (pA): 10000000 Features: Shutdown CMRR (typ) (dB): 84 Rating: Catalog

THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 0.3 Input bias current (max) (pA): 1 GBW (typ) (MHz): 0.13 Slew rate (typ) (V/µs): 0.048 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 60 CMRR (typ) (dB): 97 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.017 Output swing headroom (to positive supply) (typ) (V): -0.017 THD + N at 1 kHz (typ) (%): 0.002

THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 0.3 Input bias current (max) (pA): 1 GBW (typ) (MHz): 0.13 Slew rate (typ) (V/µs): 0.048 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.0095 Vn at 1 kHz (typ) (nV√Hz): 60 CMRR (typ) (dB): 97 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.017 Output swing headroom (to positive supply) (typ) (V): -0.017 THD + N at 1 kHz (typ) (%): 0.002

THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 0.3 Input bias current (max) (pA): 1 GBW (typ) (MHz): 0.13 Slew rate (typ) (V/µs): 0.048 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.009 Vn at 1 kHz (typ) (nV√Hz): 60 CMRR (typ) (dB): 97 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.017 Output swing headroom (to positive supply) (typ) (V): -0.017 THD + N at 1 kHz (typ) (%): 0.002

Slew rate (typ) (V/µs): 20 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 0.7 Iq per channel (typ) (mA): 5 Vn at 1 kHz (typ) (nV√Hz): 2.7 THD + N at 1 kHz (typ) (%): 0.00003 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.026 Architecture: Voltage FB CMRR (typ) (dB): 120 Input bias current (max) (pA): 72000

Slew rate (typ) (V/µs): 5 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 2 Vn at 1 kHz (typ) (nV√Hz): 4 THD + N at 1 kHz (typ) (%): 0.003 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0014 Architecture: Bipolar CMRR (typ) (dB): 85 Input bias current (max) (pA): 750000

2nd harmonic (dBc): 72 3rd harmonic (dBc): 63 Frequency of harmonic distortion measurement (MHz): 10 Architecture: Current FB Number of channels: 3 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 1000 BW at Acl (MHz): 1000 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3750 Vn at flatband (typ) (nV√Hz): 2.1 Vn at 1 kHz (typ) (nV√Hz): 2.1 Iq per channel (typ) (mA): 6.5 Vos (offset voltage at 25°C) (max) (mV): 2.2 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 55 Input bias current (max) (pA): 19000000 Offset drift (typ) (µV/°C): 30 Iout (typ) (mA): 80 2nd harmonic (dBc): 72 3rd harmonic (dBc): 63 Frequency of harmonic distortion measurement (MHz): 10