Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 12 Slew rate (typ) (V/µs): 2.8 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.11 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 6.6 Input bias current (max) (pA): 100000 CMRR (typ) (dB): 100 Iout (typ) (A): 0.015 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.075

2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 50 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 25 Vn at flatband (typ) (nV√Hz): 4.5 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 Rail-to-rail: In, Out Features: Zero Crossover Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 120 Input bias current (max) (pA): 10 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 65 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 5.25 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 1.03 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Catalog Operating temperature range (°C): -40 to 105 Offset drift (typ) (µV/°C): 0.6 Input bias current (max) (pA): 400000 CMRR (typ) (dB): 89 Iout (typ) (A): 0.024 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.076 Output swing headroom (to positive supply) (typ) (V): -0.048

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.3 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 1.5 Input bias current (max) (pA): 10 GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.03 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.023 Vn at 1 kHz (typ) (nV√Hz): 40 CMRR (typ) (dB): 86 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

GBW (typ) (MHz): 2.7 Slew rate (typ) (V/µs): 1.57 Vos (offset voltage at 25°C) (max) (mV): 3.5 Offset drift (typ) (V/°C): 0.000003 Iq per channel (typ) (mA): 0.7 Features: Shutdown Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 25 CMRR (typ) (dB): 68 Rail-to-rail: In to V-, Out Architecture: CMOS

THD + N at 1 kHz (typ) (%): 0.02 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.22 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 2.5 Slew rate (typ) (V/µs): 1 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.85 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 138 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.02

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 4.6 Slew rate (typ) (V/µs): 2.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.425 Vn at 1 kHz (typ) (nV√Hz): 25 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 0.1 Features: Shutdown Input bias current (max) (pA): 10 CMRR (typ) (dB): 95 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.03

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5 Slew rate (typ) (V/µs): 5.8 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 12.8 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 5 Input bias current (max) (pA): 115 CMRR (typ) (dB): 80 Iout (typ) (A): 0.031 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.02

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 9.5 Vos (offset voltage at 25°C) (max) (mV): 1.35 Iq per channel (typ) (mA): 1.15 Vn at 1 kHz (typ) (nV√Hz): 5.8 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 CMRR (typ) (dB): 100 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 9.5 Vos (offset voltage at 25°C) (max) (mV): 1.35 Iq per channel (typ) (mA): 1.3 Vn at 1 kHz (typ) (nV√Hz): 5.8 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.8 Input bias current (max) (pA): 1 CMRR (typ) (dB): 100 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.025