THD + N at 1 kHz (typ) (%): 0.001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 9.5 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.15 Vn at 1 kHz (typ) (nV√Hz): 5.8 CMRR (typ) (dB): 100 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.023 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.022 THD + N at 1 kHz (typ) (%): 0.001

THD + N at 1 kHz (typ) (%): 0.001 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 1.75 Input bias current (max) (pA): 1 GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 9.5 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.3 Vn at 1 kHz (typ) (nV√Hz): 5.8 CMRR (typ) (dB): 100 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.023 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.022 THD + N at 1 kHz (typ) (%): 0.001

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.1 Slew rate (typ) (V/µs): 10.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 CMRR (typ) (dB): 96 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Architecture: Fixed Gain/Buffer Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 GBW (typ) (MHz): 110 BW at Acl (MHz): 110 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1800 Vn at flatband (typ) (nV√Hz): 2.8 Vn at 1 kHz (typ) (nV√Hz): 5 Iq per channel (typ) (mA): 11 Vos (offset voltage at 25°C) (max) (mV): 35 Features: Adjustable BW/IQ/IOUT Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 15000 Iout (typ) (mA): 300 2nd harmonic (dBc): 68 3rd harmonic (dBc): 73 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.107 Vn at 1 kHz (typ) (nV√Hz): 39 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.9 Input bias current (max) (pA): 200 CMRR (typ) (dB): 86 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.007 Output swing headroom (to positive supply) (typ) (V): -0.007

Output swing headroom (to positive supply) (typ) (V): -2 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 26 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Rail-to-rail: In to V- GBW (typ) (MHz): 1.2 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 7 Iq per channel (typ) (mA): 0.175 Vn at 1 kHz (typ) (nV√Hz): 35 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 0 Features: Standard Amps Input bias current (max) (pA): 250000 CMRR (typ) (dB): 80 Iout (typ) (A): 0.04 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -2

Output swing headroom (to positive supply) (typ) (V): -0.07 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 4.5 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 0.43 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.4 Features: EMI Hardened Input bias current (max) (pA): 10 CMRR (typ) (dB): 94 Iout (typ) (A): 0.062 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.007 Output swing headroom (to positive supply) (typ) (V): -0.07

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.01 Offset drift (typ) (µV/°C): 0.02 Input bias current (max) (pA): 200 GBW (typ) (MHz): 0.35 Features: EMI Hardened, Small Size, Zero Drift Slew rate (typ) (V/µs): 0.16 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.017 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.01 Offset drift (typ) (µV/°C): 0.02 Input bias current (max) (pA): 200 GBW (typ) (MHz): 0.35 Features: EMI Hardened, Small Size, Zero Drift Slew rate (typ) (V/µs): 0.16 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.017 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

2nd harmonic (dBc): 75 3rd harmonic (dBc): 75 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 11 GBW (typ) (MHz): 71 BW at Acl (MHz): 140 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 57 Vn at flatband (typ) (nV√Hz): 10 Vn at 1 kHz (typ) (nV√Hz): 10 Iq per channel (typ) (mA): 1.35 Vos (offset voltage at 25°C) (max) (mV): 0.75 Rail-to-rail: In, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 96 Input bias current (max) (pA): 2400000 Offset drift (typ) (µV/°C): 0.8 Iout (typ) (mA): 35 2nd harmonic (dBc): 75 3rd harmonic (dBc): 75 Frequency of harmonic distortion measurement (MHz): 1