Output swing headroom (to positive supply) (typ) (V): 0.115 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): 0.115

Output swing headroom (to positive supply) (typ) (V): 0.1 THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 1 Features: e-Trim™ Slew rate (typ) (V/µs): 1 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.0235 Vn at 1 kHz (typ) (nV√Hz): 60 CMRR (typ) (dB): 121 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): -0.1 Output swing headroom (to positive supply) (typ) (V): 0.1 THD + N at 1 kHz (typ) (%): 0.002

Output swing headroom (to positive supply) (typ) (V): 0.115 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): 0.115

Output swing headroom (to positive supply) (typ) (V): 0.115 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): 0.115

Output swing headroom (to positive supply) (typ) (V): 0.115 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): 0.115

Output swing headroom (to positive supply) (typ) (V): 0.2 THD + N at 1 kHz (typ) (%): 0.0004 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 3.6 Features: EMI Hardened, Super Beta, e-Trim™ Slew rate (typ) (V/µs): 4 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.04 Iq per channel (typ) (mA): 0.22 Vn at 1 kHz (typ) (nV√Hz): 7.2 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 400 Iout (typ) (A): 0.025 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1 Input common mode headroom (to positive supply) (typ) (V): -1.4 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): 0.2 THD + N at 1 kHz (typ) (%): 0.0004

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 21 Vos (offset voltage at 25°C) (max) (mV): 0.895 Iq per channel (typ) (mA): 0.56 Vn at 1 kHz (typ) (nV√Hz): 10.8 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened, High Cload Drive, MUX Friendly, Small Size CMRR (typ) (dB): 130 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 21 Vos (offset voltage at 25°C) (max) (mV): 0.895 Iq per channel (typ) (mA): 0.56 Vn at 1 kHz (typ) (nV√Hz): 10.8 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 CMRR (typ) (dB): 130 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3.5 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: Cost Optimized, EMI Hardened, MUX Friendly, Small Size CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

2nd harmonic (dBc): -105 3rd harmonic (dBc): -95 Frequency of harmonic distortion measurement (MHz): 0.02 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 10 Acl, min spec gain (V/V): 6 Slew rate (typ) (V/µs): 24 Vn at flatband (typ) (nV√Hz): 3.8 Vn at 1 kHz (typ) (nV√Hz): 3.8 Iq per channel (typ) (mA): 0.9 Vos (offset voltage at 25°C) (max) (mV): 0.6 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 10 Offset drift (typ) (µV/°C): 0.3 Iout (typ) (mA): 20 2nd harmonic (dBc): -105 3rd harmonic (dBc): -95 Frequency of harmonic distortion measurement (MHz): 0.02