Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.2
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 110
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.2
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 110
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.25
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.225
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 105
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.25
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.225
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 105
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.85
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 115
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.85
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 115
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 1.1
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
CMRR (typ) (dB): 90
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 1.1
Iq per channel (typ) (mA): 0.2
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
CMRR (typ) (dB): 90
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
TLE2061AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、单通道、36V、2MHz、输入接近 V+、1.5mV 失调电压、JFET 输入运算放大器
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 0.29
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 0.29
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.29
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.29
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
TLE2062AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、双通道、36V、2MHz、输入接近 V+、1.5mV 失调电压、JFET 输入运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
TLE2064AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、四通道、36V、2MHz、输入接近 V+、1.5mV 失调电压、JFET 输入运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
TLE2064BM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、四通道、36V、2MHz、输入接近 V+、500μV 失调电压、JFET 输入运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3