Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Rail-to-rail: In to V+
GBW (typ) (MHz): 2
Slew rate (typ) (V/µs): 3.4
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 0.312
Vn at 1 kHz (typ) (nV√Hz): 40
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 6
Input bias current (max) (pA): 60
CMRR (typ) (dB): 90
Iout (typ) (A): 0.045
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3
Input common mode headroom (to positive supply) (typ) (V): 1
Output swing headroom (to negative supply) (typ) (V): 1.3
Output swing headroom (to positive supply) (typ) (V): -1.3
TLE2071AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、单通道、38V、10MHz、40V/μs 压摆率、2mV 失调电压、JFET 输入运算放大器
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 1.7
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 3.2
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 1.7
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 3.2
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2071M
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、单通道、38V、10MHz、40V/μs 压摆率、输入接近 V+、JFET 输入运算放大器
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 1.7
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 3.2
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 1.7
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 3.2
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2072AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、双通道、38V、10MHz、40V/μs 压摆率、2mV 失调电压、JFET 输入运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2072M
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、双通道、38V、10MHz、40V/μs 压摆率、输入接近 V+、JFET 输入运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2074AM
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、四通道、38V、10MHz、40V/μs 压摆率、2mV 失调电压、JFET 输入运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.625
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 10.1
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.625
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 10.1
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2074M
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 军用级、四通道、38V、10MHz、40V/μs 压摆率、输入接近 V+、JFET 输入运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.625
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 10.1
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.625
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 10.1
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 1.5
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 1500000
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 3.4
Vn at 1 kHz (typ) (nV√Hz): 10.5
CMRR (typ) (dB): 108
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8
更多
THD + N at 1 kHz (typ) (%): 0.0052
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 1.5
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 1500000
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 3.4
Vn at 1 kHz (typ) (nV√Hz): 10.5
CMRR (typ) (dB): 108
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8
THD + N at 1 kHz (typ) (%): 0.0052
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 3.3
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 3.3
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8