Output swing headroom (to positive supply) (typ) (V): -0.3 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Rail-to-rail: In to V+ GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.29 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 6 Features: Decompensated Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 1 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3

Output swing headroom (to positive supply) (typ) (V): -0.3 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Rail-to-rail: In to V+ GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 0.5 Iq per channel (typ) (mA): 0.29 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 6 Features: Decompensated Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 1 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3

Output swing headroom (to positive supply) (typ) (V): -0.3 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Rail-to-rail: In to V+ GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.29 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 6 Features: Decompensated Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 1 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 1.5 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.71 Features: High Cload Drive Slew rate (typ) (V/µs): 0.55 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003

THD + N at 1 kHz (typ) (%): 0.003 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 2.5 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.71 Slew rate (typ) (V/µs): 0.55 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003

Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.71 Features: High Cload Drive Slew rate (typ) (V/µs): 0.55 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Vos (offset voltage at 25°C) (max) (mV): 0.025 Offset drift (typ) (µV/°C): 0.2 Input bias current (max) (pA): 40000 GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 2.8 Rail-to-rail: No Iq per channel (typ) (mA): 2.8 Vn at 1 kHz (typ) (nV√Hz): 3 CMRR (typ) (dB): 126 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.03 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 4 Input common mode headroom (to positive supply) (typ) (V): -4 Output swing headroom (to negative supply) (typ) (V): 1.2 Output swing headroom (to positive supply) (typ) (V): -1.2

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 5.25 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 1.03 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 0.6 Input bias current (max) (pA): 400000 CMRR (typ) (dB): 89 Iout (typ) (A): 0.024 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.076 Output swing headroom (to positive supply) (typ) (V): -0.048