Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 11 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.05 Slew rate (typ) (V/µs): 0.027 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.025 Vn at 1 kHz (typ) (nV√Hz): 110 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 1 CMRR (typ) (dB): 85 Iout (typ) (A): 0.007 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 24 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 14 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.36 Vn at 1 kHz (typ) (nV√Hz): 27 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 5 Input bias current (max) (pA): 140000 CMRR (typ) (dB): 107 Iout (typ) (A): 0.0043 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.25 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.032 Output swing headroom (to positive supply) (typ) (V): -0.048

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 24 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 14 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.36 Vn at 1 kHz (typ) (nV√Hz): 27 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 5 Input bias current (max) (pA): 140000 CMRR (typ) (dB): 107 Iout (typ) (A): 0.0043 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.25 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.032 Output swing headroom (to positive supply) (typ) (V): -0.048

3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 34 GBW (typ) (MHz): 100 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3600 Vn at flatband (typ) (nV√Hz): 12 Vn at 1 kHz (typ) (nV√Hz): 12 Iq per channel (typ) (mA): 2.5 Vos (offset voltage at 25°C) (max) (mV): 3 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 110 Input bias current (max) (pA): 3000000 Offset drift (typ) (µV/°C): 6 Iout (typ) (mA): 135 2nd harmonic (dBc): 50 3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5

3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 GBW (typ) (MHz): 100 BW at Acl (MHz): 160 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3000 Vn at flatband (typ) (nV√Hz): 12 Vn at 1 kHz (typ) (nV√Hz): 12 Iq per channel (typ) (mA): 2.3 Vos (offset voltage at 25°C) (max) (mV): 1.5 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 110 Input bias current (max) (pA): 1500000 Offset drift (typ) (µV/°C): 6 Iout (typ) (mA): 85 2nd harmonic (dBc): 50 3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 1.5 GBW (typ) (MHz): 0.05 Slew rate (typ) (V/µs): 0.028 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.02 Vn at 1 kHz (typ) (nV√Hz): 80 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.027 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.2 Slew rate (typ) (V/µs): 0.12 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.5 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Automotive, Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.2 Slew rate (typ) (V/µs): 0.12 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 Rating: Catalog Operating temperature range (°C): 0 to 70 Offset drift (typ) (µV/°C): 0.5 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Catalog Operating temperature range (°C): to Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.2