Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 1.5 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Automotive, Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 1.5 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.03375 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 75 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.03375 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06 THD + N at 1 kHz (typ) (%): 0.2

THD + N at 1 kHz (typ) (%): 0.0008 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 9 Vos (offset voltage at 25°C) (max) (mV): 1 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 50 GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 10 Rail-to-rail: No Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 80 Rating: Catalog Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.025 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 2.5 Output swing headroom (to positive supply) (typ) (V): -2.5 THD + N at 1 kHz (typ) (%): 0.0008

THD + N at 1 kHz (typ) (%): 0.0008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 9 Vos (offset voltage at 25°C) (max) (mV): 1 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 50 GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 10 Rail-to-rail: No Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 80 Rating: Catalog Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.025 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 2.5 Output swing headroom (to positive supply) (typ) (V): -2.5 THD + N at 1 kHz (typ) (%): 0.0008

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 9 Rail-to-rail: No GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 50 CMRR (typ) (dB): 80 Iout (typ) (A): 0.025 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 2.5 Output swing headroom (to positive supply) (typ) (V): -2.5

2nd harmonic (dBc): 75 3rd harmonic (dBc): 55 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 GBW (typ) (MHz): 200 BW at Acl (MHz): 220 Acl, min spec gain (V/V): 2 Slew rate (typ) (V/µs): 4100 Vn at flatband (typ) (nV√Hz): 14 Vn at 1 kHz (typ) (nV√Hz): 14 Iq per channel (typ) (mA): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1 Rail-to-rail: No Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 105 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 35 Iout (typ) (mA): 100 2nd harmonic (dBc): 75 3rd harmonic (dBc): 55 Frequency of harmonic distortion measurement (MHz): 5

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 1.5 GBW (typ) (MHz): 0.05 Slew rate (typ) (V/µs): 0.028 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.02 Vn at 1 kHz (typ) (nV√Hz): 80 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.027 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Slew rate (typ) (V/µs): 8 Vos (offset voltage at 25°C) (max) (mV): 5 Offset drift (typ) (V/°C): 0.00001 Iq per channel (typ) (mA): 12 Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 100 CMRR (typ) (dB): 106 Rail-to-rail: No Architecture: FET