Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.71 Features: High Cload Drive Slew rate (typ) (V/µs): 0.55 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 CMRR (typ) (dB): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.15 THD + N at 1 kHz (typ) (%): 0.003

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.71 Slew rate (typ) (V/µs): 0.55 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.71 Slew rate (typ) (V/µs): 0.55 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 GBW (typ) (MHz): 1.5 Slew rate (typ) (V/µs): 1.3 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1 Vn at 1 kHz (typ) (nV√Hz): 37 CMRR (typ) (dB): 82 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 25 Iout (typ) (A): 0.011 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.25 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.18 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 40 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 1.7 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 3.2 Input bias current (max) (pA): 175 CMRR (typ) (dB): 98 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3.1 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.8 Output swing headroom (to positive supply) (typ) (V): -0.9

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 40 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 1.7 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 3.2 Input bias current (max) (pA): 175 CMRR (typ) (dB): 98 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3.1 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.8 Output swing headroom (to positive supply) (typ) (V): -0.9

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 40 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 1.55 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2.4 Input bias current (max) (pA): 175 CMRR (typ) (dB): 98 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3.1 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.8 Output swing headroom (to positive supply) (typ) (V): -0.9

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 40 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 1.625 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 10.1 Input bias current (max) (pA): 175 CMRR (typ) (dB): 98 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3.1 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.8 Output swing headroom (to positive supply) (typ) (V): -0.9

THD + N at 1 kHz (typ) (%): 0.01 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.35 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 0.1 GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.035 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.016 Vn at 1 kHz (typ) (nV√Hz): 83 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.4 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.01

THD + N at 1 kHz (typ) (%): 0.01 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.35 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 0.1 GBW (typ) (MHz): 1.3 Slew rate (typ) (V/µs): 1.5 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 22 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.4 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.13 THD + N at 1 kHz (typ) (%): 0.01