Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 Offset drift (typ) (µV/°C): 1 GBW (typ) (MHz): 1.5 Slew rate (typ) (V/µs): 1.3 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.5 Vn at 1 kHz (typ) (nV√Hz): 37 CMRR (typ) (dB): 82 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3 THD + N at 1 kHz (typ) (%): 0.01

THD + N at 1 kHz (typ) (%): 0.01 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 4 GBW (typ) (MHz): 1.5 Slew rate (typ) (V/µs): 1.3 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.4125 Vn at 1 kHz (typ) (nV√Hz): 37 CMRR (typ) (dB): 82 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.25 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1 THD + N at 1 kHz (typ) (%): 0.01

THD + N at 1 kHz (typ) (%): 0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.35 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 0.1 GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.035 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.02 Vn at 1 kHz (typ) (nV√Hz): 83 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.4 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.01

THD + N at 1 kHz (typ) (%): 0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.35 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 0.1 GBW (typ) (MHz): 1.3 Slew rate (typ) (V/µs): 1.5 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 22 CMRR (typ) (dB): 85 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.4 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.13 THD + N at 1 kHz (typ) (%): 0.01

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.085 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 9 Iq per channel (typ) (mA): 0.006 Vn at 1 kHz (typ) (nV√Hz): 68 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 200 CMRR (typ) (dB): 94 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -1.2

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.085 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 10 Iq per channel (typ) (mA): 0.006 Vn at 1 kHz (typ) (nV√Hz): 68 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 200 CMRR (typ) (dB): 94 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -1.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.525 Slew rate (typ) (V/µs): 0.43 Vos (offset voltage at 25°C) (max) (mV): 9 Iq per channel (typ) (mA): 0.105 Vn at 1 kHz (typ) (nV√Hz): 32 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1.7 Input bias current (max) (pA): 200 CMRR (typ) (dB): 91 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -1.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.32 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 9 Iq per channel (typ) (mA): 0.7 Vn at 1 kHz (typ) (nV√Hz): 25 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2.7 Input bias current (max) (pA): 200 CMRR (typ) (dB): 80 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -1.2

GBW (typ) (MHz): 20 Slew rate (typ) (V/µs): 25 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 5.3 Vn at 1 kHz (typ) (nV√Hz): 11 Features: Burr-Brown™ Audio THD + N at 1 kHz (typ) (%): 0.0003 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.035 Architecture: FET CMRR (typ) (dB): 100 Input bias current (max) (pA): 200

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Automotive, Catalog Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06