Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Vos (offset voltage at 25°C) (max) (mV): 0.95
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
GBW (typ) (MHz): 2.18
Features: High Cload Drive
Slew rate (typ) (V/µs): 3.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
CMRR (typ) (dB): 75
Rating: Automotive, Catalog
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.0008
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Vos (offset voltage at 25°C) (max) (mV): 0.95
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
GBW (typ) (MHz): 2.18
Features: High Cload Drive
Slew rate (typ) (V/µs): 3.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
CMRR (typ) (dB): 75
Rating: Automotive, Catalog
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.0008
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.11
Vos (offset voltage at 25°C) (max) (mV): 9
Iq per channel (typ) (mA): 0.043
Vn at 1 kHz (typ) (nV√Hz): 42
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.5
Input bias current (max) (pA): 0.4
CMRR (typ) (dB): 83
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.004
Output swing headroom (to positive supply) (typ) (V): -0.013
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.11
Vos (offset voltage at 25°C) (max) (mV): 9
Iq per channel (typ) (mA): 0.043
Vn at 1 kHz (typ) (nV√Hz): 42
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.5
Input bias current (max) (pA): 0.4
CMRR (typ) (dB): 83
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.004
Output swing headroom (to positive supply) (typ) (V): -0.013
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.11
Vos (offset voltage at 25°C) (max) (mV): 9
Iq per channel (typ) (mA): 0.04
Vn at 1 kHz (typ) (nV√Hz): 42
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.5
Input bias current (max) (pA): 0.4
CMRR (typ) (dB): 83
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.004
Output swing headroom (to positive supply) (typ) (V): -0.013
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.11
Vos (offset voltage at 25°C) (max) (mV): 9
Iq per channel (typ) (mA): 0.04
Vn at 1 kHz (typ) (nV√Hz): 42
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.5
Input bias current (max) (pA): 0.4
CMRR (typ) (dB): 83
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.004
Output swing headroom (to positive supply) (typ) (V): -0.013
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.35
Offset drift (typ) (µV/°C): 1
Input bias current (max) (pA): 0.1
GBW (typ) (MHz): 0.1
Slew rate (typ) (V/µs): 0.035
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.016
Vn at 1 kHz (typ) (nV√Hz): 83
CMRR (typ) (dB): 85
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.021
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.005
Output swing headroom (to positive supply) (typ) (V): -0.005
更多
THD + N at 1 kHz (typ) (%): 0.01
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.35
Offset drift (typ) (µV/°C): 1
Input bias current (max) (pA): 0.1
GBW (typ) (MHz): 0.1
Slew rate (typ) (V/µs): 0.035
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.016
Vn at 1 kHz (typ) (nV√Hz): 83
CMRR (typ) (dB): 85
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.021
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.005
Output swing headroom (to positive supply) (typ) (V): -0.005
THD + N at 1 kHz (typ) (%): 0.01
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.35
Offset drift (typ) (µV/°C): 1
Input bias current (max) (pA): 0.1
GBW (typ) (MHz): 1.3
Slew rate (typ) (V/µs): 1.5
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.45
Vn at 1 kHz (typ) (nV√Hz): 22
CMRR (typ) (dB): 85
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.021
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.13
更多
THD + N at 1 kHz (typ) (%): 0.01
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.35
Offset drift (typ) (µV/°C): 1
Input bias current (max) (pA): 0.1
GBW (typ) (MHz): 1.3
Slew rate (typ) (V/µs): 1.5
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.45
Vn at 1 kHz (typ) (nV√Hz): 22
CMRR (typ) (dB): 85
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.021
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.4
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.13
THD + N at 1 kHz (typ) (%): 0.01
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 2.18
Slew rate (typ) (V/µs): 3.6
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
Rating: Automotive, Catalog
Operating temperature range (°C): 0 to 70
Offset drift (typ) (µV/°C): 2
Features: High Cload Drive
Input bias current (max) (pA): 60
CMRR (typ) (dB): 75
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.06
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 2.18
Slew rate (typ) (V/µs): 3.6
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
Rating: Automotive, Catalog
Operating temperature range (°C): 0 to 70
Offset drift (typ) (µV/°C): 2
Features: High Cload Drive
Input bias current (max) (pA): 60
CMRR (typ) (dB): 75
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.06
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Vos (offset voltage at 25°C) (max) (mV): 0.95
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
GBW (typ) (MHz): 2.18
Features: High Cload Drive
Slew rate (typ) (V/µs): 3.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
CMRR (typ) (dB): 75
Rating: Automotive, Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.0008
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4
Vos (offset voltage at 25°C) (max) (mV): 0.95
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
GBW (typ) (MHz): 2.18
Features: High Cload Drive
Slew rate (typ) (V/µs): 3.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 1.1
Vn at 1 kHz (typ) (nV√Hz): 9
CMRR (typ) (dB): 75
Rating: Automotive, Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.0022
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -0.8
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.0008
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.45
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 6
Iq per channel (typ) (mA): 1.45
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
TLE2082A
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 双通道、38V、10MHz、40V/μs 压摆率、2mV 失调电压、JFET 输入运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 1.45
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 1.45
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 2.4
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Catalog
Operating temperature range (°C): -40 to 105
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 2.4
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Catalog
Operating temperature range (°C): -40 to 105
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8