Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.5 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.2 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Vos (offset voltage at 25°C) (max) (mV): 0.85 GBW (typ) (MHz): 0.2 Features: High Cload Drive Slew rate (typ) (V/µs): 0.12 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 83 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.2

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.2 Slew rate (typ) (V/µs): 0.12 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.035 Vn at 1 kHz (typ) (nV√Hz): 19 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 0.5 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.8 Vos (offset voltage at 25°C) (max) (mV): 0.003 GBW (typ) (MHz): 1.9 Features: Zero Drift Slew rate (typ) (V/µs): 2.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.003 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 23 CMRR (typ) (dB): 140 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.003 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.8 Vos (offset voltage at 25°C) (max) (mV): 0.003 Offset drift (typ) (µV/°C): 0.003 Input bias current (max) (pA): 60 GBW (typ) (MHz): 1.9 Features: Zero Drift Slew rate (typ) (V/µs): 2.8 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 23 CMRR (typ) (dB): 140 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.9 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.3 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 2 Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 110 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 70000 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.6 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.17 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 110 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In to V- GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 0.6 Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 CMRR (typ) (dB): 95 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Rail-to-rail: In to V+ GBW (typ) (MHz): 2 Slew rate (typ) (V/µs): 3.4 Vos (offset voltage at 25°C) (max) (mV): 0.5 Iq per channel (typ) (mA): 0.29 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 6 Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 1 Output swing headroom (to negative supply) (typ) (V): 1.3 Output swing headroom (to positive supply) (typ) (V): -1.3