3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 50 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 300 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 11 Vos (offset voltage at 25°C) (max) (mV): 5.8 Rail-to-rail: In to V-, Out Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 66 Input bias current (max) (pA): 7000000 Offset drift (typ) (µV/°C): 3.13 Iout (typ) (mA): 105 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.4 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 8.7 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.5 Input common mode headroom (to positive supply) (typ) (V): 0.5 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 18 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.5 Input common mode headroom (to positive supply) (typ) (V): 0.5 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.075 Vn at 1 kHz (typ) (nV√Hz): 28 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 76 CMRR (typ) (dB): 76 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.05 Vn at 1 kHz (typ) (nV√Hz): 25 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: EMI Hardened Input bias current (max) (pA): 10 CMRR (typ) (dB): 80 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.065 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.01 GBW (typ) (MHz): 0.55 Features: EMI Hardened Slew rate (typ) (V/µs): 0.2 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.001 Iq per channel (typ) (mA): 0.1 Vn at 1 kHz (typ) (nV√Hz): 20 CMRR (typ) (dB): 145 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 350 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035

Output swing headroom (to positive supply) (typ) (V): -0.9 THD + N at 1 kHz (typ) (%): 0.000028 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Vos (offset voltage at 25°C) (max) (mV): 0.3 GBW (typ) (MHz): 45 Features: MUX Friendly Slew rate (typ) (V/µs): 150 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.3 Iq per channel (typ) (mA): 5.5 Vn at 1 kHz (typ) (nV√Hz): 4 CMRR (typ) (dB): 115 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 8 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 2.5 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.9 Output swing headroom (to positive supply) (typ) (V): -0.9 THD + N at 1 kHz (typ) (%): 0.000028

Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000025 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.035 GBW (typ) (MHz): 18 Features: Super Beta Slew rate (typ) (V/µs): 6.4 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 2000 Iout (typ) (A): 0.065 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000025