Slew rate (typ) (V/µs): 5 Rail-to-rail: In, Out Vos (offset voltage at 25°C) (max) (mV): 1.25 Iq per channel (typ) (mA): 0.94 Vn at 1 kHz (typ) (nV√Hz): 7 THD + N at 1 kHz (typ) (%): 0.00035 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Product type: Essential Architecture: CMOS CMRR (typ) (dB): 102

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.2 GBW (typ) (MHz): 25 Slew rate (typ) (V/µs): 40 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 4.4 Vn at 1 kHz (typ) (nV√Hz): 4 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 40 Iout (typ) (A): 0.1 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.00006 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.005 GBW (typ) (MHz): 14 Features: EMI Hardened, High Cload Drive, Zero Drift Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.006 Iq per channel (typ) (mA): 1.3 Vn at 1 kHz (typ) (nV√Hz): 5.2 CMRR (typ) (dB): 168 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 300 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2.5 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.00006

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 5 Slew rate (typ) (V/µs): 15 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.33 Vn at 1 kHz (typ) (nV√Hz): 20 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.5 Features: Cost Optimized, EMI Hardened, Shutdown, Small Size CMRR (typ) (dB): 96 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

2nd harmonic (dBc): 80 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 GBW (typ) (MHz): 8000 BW at Acl (MHz): 2500 Acl, min spec gain (V/V): 7 Slew rate (typ) (V/µs): 2750 Vn at flatband (typ) (nV√Hz): 0.98 Vn at 1 kHz (typ) (nV√Hz): 1.9 Iq per channel (typ) (mA): 17.8 Vos (offset voltage at 25°C) (max) (mV): 2.5 Rail-to-rail: No Features: Decompensated, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 18500000 Offset drift (typ) (µV/°C): 1.25 Iout (typ) (mA): 80 2nd harmonic (dBc): 80 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10

Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.01 GBW (typ) (MHz): 0.55 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.2 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.001 Iq per channel (typ) (mA): 0.1 Vn at 1 kHz (typ) (nV√Hz): 20 CMRR (typ) (dB): 145 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 350 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035

Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.09 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Offset drift (typ) (µV/°C): 4 Features: Cost Optimized, EMI Hardened, Small Size Input bias current (max) (pA): 15 CMRR (typ) (dB): 92 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.09 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 4 Features: Cost Optimized, EMI Hardened, Standard Amps CMRR (typ) (dB): 92 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.7 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.08 Vn at 1 kHz (typ) (nV√Hz): 33 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened, Standard Amps CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

Output swing headroom (to positive supply) (typ) (V): -0.02 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.7 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.08 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened, Small Size, Standard Amps CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02