Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 2 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.06 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.6 Features: Cost Optimized, EMI Hardened, Shutdown, Small Size CMRR (typ) (dB): 95 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 2 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.06 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Offset drift (typ) (µV/°C): 0.6 Features: Cost Optimized, EMI Hardened, Small Size CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -1 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.09 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Offset drift (typ) (µV/°C): 4 Features: Cost Optimized, EMI Hardened, Small Size, Standard Amps CMRR (typ) (dB): 92 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.09 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 4 Features: Cost Optimized, EMI Hardened, Standard Amps CMRR (typ) (dB): 100 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.09 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 4 Features: Cost Optimized, EMI Hardened, Standard Amps CMRR (typ) (dB): 92 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -1

2nd harmonic (dBc): 90 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 GBW (typ) (MHz): 900 BW at Acl (MHz): 1800 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1150 Vn at flatband (typ) (nV√Hz): 3.3 Vn at 1 kHz (typ) (nV√Hz): 12.1 Iq per channel (typ) (mA): 20.5 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 84 Input bias current (max) (pA): 5 Offset drift (typ) (µV/°C): -2 Iout (typ) (mA): 76 2nd harmonic (dBc): 90 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.075 Vn at 1 kHz (typ) (nV√Hz): 28 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Small Size Input bias current (max) (pA): 76 CMRR (typ) (dB): 76 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Vos (offset voltage at 25°C) (max) (mV): 0.005 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift Slew rate (typ) (V/µs): 5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.005 Iq per channel (typ) (mA): 1.7 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 138 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 350 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.0005

2nd harmonic (dBc): 80 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 GBW (typ) (MHz): 5500 BW at Acl (MHz): 1200 Acl, min spec gain (V/V): 7 Slew rate (typ) (V/µs): 2000 Vn at flatband (typ) (nV√Hz): 2.5 Vn at 1 kHz (typ) (nV√Hz): 25 Iq per channel (typ) (mA): 20.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Rail-to-rail: No Features: Decompensated, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 5 Offset drift (typ) (µV/°C): 1.5 Iout (typ) (mA): 80 2nd harmonic (dBc): 80 3rd harmonic (dBc): 86 Frequency of harmonic distortion measurement (MHz): 10

THD + N at 1 kHz (typ) (%): 0.000025 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 32 Slew rate (typ) (V/µs): 10 Rail-to-rail: No Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 2.6 Vn at 1 kHz (typ) (nV√Hz): 2.8 CMRR (typ) (dB): 127 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 2000000 Iout (typ) (A): 0.145 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.8 Output swing headroom (to positive supply) (typ) (V): -0.8 THD + N at 1 kHz (typ) (%): 0.000025