Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 92 Architecture: FET

2nd harmonic (dBc): 99 3rd harmonic (dBc): 104 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 27 GBW (typ) (MHz): 70 BW at Acl (MHz): 105 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 192 Vn at flatband (typ) (nV√Hz): 6 Vn at 1 kHz (typ) (nV√Hz): 16.43 Iq per channel (typ) (mA): 3.6 Vos (offset voltage at 25°C) (max) (mV): 1.5 Rail-to-rail: In, Out Features: C-Load Drive Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 2 Iout (typ) (mA): 75 2nd harmonic (dBc): 99 3rd harmonic (dBc): 104 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 120 3rd harmonic (dBc): 145 Frequency of harmonic distortion measurement (MHz): 0.1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.4 GBW (typ) (MHz): 50 BW at Acl (MHz): 105 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 105 Vn at flatband (typ) (nV√Hz): 4.7 Vn at 1 kHz (typ) (nV√Hz): 4.7 Iq per channel (typ) (mA): 0.592 Vos (offset voltage at 25°C) (max) (mV): 0.165 Rail-to-rail: In to V-, Out Features: Integrated Multiplexer, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 110 Input bias current (max) (pA): 520000 Offset drift (typ) (µV/°C): 0.4 Iout (typ) (mA): 50 2nd harmonic (dBc): 120 3rd harmonic (dBc): 145 Frequency of harmonic distortion measurement (MHz): 0.1

Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.25 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, MUX Friendly, e-Trim™ Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 140 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008

Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.25 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, MUX Friendly, e-Trim™ Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 140 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.538 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: Cost Optimized, EMI Hardened, Shutdown, Small Size CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, MUX Friendly, e-Trim™ Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 120 Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 1.3 Features: Cost Optimized, Super Beta Slew rate (typ) (V/µs): 2.7 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.2 Iq per channel (typ) (mA): 0.35 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 1500 Iout (typ) (A): 0.04 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.25 Input common mode headroom (to positive supply) (typ) (V): -1.25 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 1.7 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.08 Vn at 1 kHz (typ) (nV√Hz): 33 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened, Standard Amps CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02