GBW (typ) (MHz): 15 Slew rate (typ) (V/µs): 70 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 5 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 250000 CMRR (typ) (dB): 100 Iout (typ) (A): 0.021 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): -3 Output swing headroom (to negative supply) (typ) (V): 2 Output swing headroom (to positive supply) (typ) (V): -2

Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 80 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 27 Vn at flatband (typ) (nV√Hz): 4.5 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 4.6 Vos (offset voltage at 25°C) (max) (mV): 1.9 Rail-to-rail: In, Out Features: Zero Crossover Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 115 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 0.4 Iout (typ) (mA): 85

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Rail-to-rail: In to V+ GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.3 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Space Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 75000 CMRR (typ) (dB): 96 Iout (typ) (A): 0.025 Architecture: Bipolar Radiation, TID (typ) (krad): 50 Radiation, SEL (MeV·cm2/mg): Bipolar

Slew rate (typ) (V/µs): 12 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 5 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Military Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 3 CMRR (typ) (dB): 100 Iout (typ) (A): 0.025 Architecture: FET

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Rail-to-rail: In to V+ GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 15 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 25 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 7 Input bias current (max) (pA): 200 CMRR (typ) (dB): 100 Iout (typ) (A): 0.025 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3.5 Input common mode headroom (to positive supply) (typ) (V): 0.5 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.5

Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 35 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 7 CMRR (typ) (dB): 95 Iout (typ) (A): 0.0068 Architecture: FET

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 45 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.1 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.05 Slew rate (typ) (V/µs): 0.2 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.27 Vn at 1 kHz (typ) (nV√Hz): 50 Rating: Military Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 20000 CMRR (typ) (dB): 102 Iout (typ) (A): 0.02 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Vos (offset voltage at 25°C) (max) (mV): 0.3 Offset drift (typ) (µV/°C): 0.4 Input bias current (max) (pA): 30000 GBW (typ) (MHz): 0.7 Slew rate (typ) (V/µs): 0.4 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.35 Vn at 1 kHz (typ) (nV√Hz): 22 CMRR (typ) (dB): 117 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.025 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 1 Output swing headroom (to positive supply) (typ) (V): -1

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 2.18 Features: High Cload Drive Slew rate (typ) (V/µs): 3.6 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 75 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0008