Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 0.95 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.4 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.225 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 102 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.6 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.225 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 100 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Vos (offset voltage at 25°C) (max) (mV): 0.025 Offset drift (typ) (µV/°C): 0.2 Input bias current (max) (pA): 90000 GBW (typ) (MHz): 13 Slew rate (typ) (V/µs): 2.8 Rail-to-rail: No Iq per channel (typ) (mA): 3.8 Vn at 1 kHz (typ) (nV√Hz): 2.5 CMRR (typ) (dB): 131 Rating: Military Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.035 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 2 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.8 THD + N at 1 kHz (typ) (%): 0.002

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Rail-to-rail: In to V+ GBW (typ) (MHz): 2 Slew rate (typ) (V/µs): 3.4 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 0.312 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 6 Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 1 Output swing headroom (to negative supply) (typ) (V): 1.3 Output swing headroom (to positive supply) (typ) (V): -1.3

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 6 Rail-to-rail: In to V- GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 15 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 34 Rating: Catalog Operating temperature range (°C): 0 to 70 Offset drift (typ) (µV/°C): 10 Input bias current (max) (pA): 400 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -3 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.5

GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 13 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 20 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 10 Input bias current (max) (pA): 200 CMRR (typ) (dB): 100 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 3 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.5