Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Rating: Catalog Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.4 BW at Acl (MHz): 150 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 220 Architecture: Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz): 3.3 Iq per channel (typ) (mA): 1.37 Rail-to-rail: In to V-, Out Vos (offset voltage at 25°C) (max) (mV): 0.265 Operating temperature range (°C): -40 to 125 Iout (typ) (mA): 65 2nd harmonic (dBc): 128 3rd harmonic (dBc): 139 Frequency of harmonic distortion measurement (MHz): 0.1 GBW (typ) (MHz): 135 Input bias current (max) (pA): 1500000 Features: Shutdown CMRR (typ) (dB): 110 Rating: Catalog

Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.01 GBW (typ) (MHz): 0.55 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.2 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.001 Iq per channel (typ) (mA): 0.1 Vn at 1 kHz (typ) (nV√Hz): 20 CMRR (typ) (dB): 145 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 350 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015 THD + N at 1 kHz (typ) (%): 0.035

Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Vos (offset voltage at 25°C) (max) (mV): 0.005 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift Slew rate (typ) (V/µs): 5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.005 Iq per channel (typ) (mA): 1.7 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 138 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 350 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.005 THD + N at 1 kHz (typ) (%): 0.0005

2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 7.5 Vn at 1 kHz (typ) (nV√Hz): 7.5 Iq per channel (typ) (mA): 5.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: In, Out Features: EMI Hardened Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 4.5 Iout (typ) (mA): 100 2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 79 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 110 BW at Acl (MHz): 205 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 560 Vn at flatband (typ) (nV√Hz): 4.6 Vn at 1 kHz (typ) (nV√Hz): 5 Iq per channel (typ) (mA): 1 Vos (offset voltage at 25°C) (max) (mV): 0.4 Rail-to-rail: In to V-, Out Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 116 Input bias current (max) (pA): 1000000 Offset drift (typ) (µV/°C): 1.1 Iout (typ) (mA): 50 2nd harmonic (dBc): 85 3rd harmonic (dBc): 79 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1.2 Slew rate (typ) (V/µs): 0.4 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.125 Vn at 1 kHz (typ) (nV√Hz): 22 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 110 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.05

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1.2 Slew rate (typ) (V/µs): 0.4 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.125 Vn at 1 kHz (typ) (nV√Hz): 22 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 110 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.05