Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1.2 Slew rate (typ) (V/µs): 0.4 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.125 Vn at 1 kHz (typ) (nV√Hz): 22 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 110 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.05

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0018 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.00045 Vn at 1 kHz (typ) (nV√Hz): 420 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: EMI Hardened CMRR (typ) (dB): 98 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00054 Input common mode headroom (to positive supply) (typ) (V): 0.00045 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.006 Slew rate (typ) (V/µs): 0.0015 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.00045 Vn at 1 kHz (typ) (nV√Hz): 450 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.0007 Input common mode headroom (to positive supply) (typ) (V): 0.00045 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1.7 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 116 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Vos (offset voltage at 25°C) (max) (mV): 0.55 GBW (typ) (MHz): 0.006 Features: Cost Optimized, EMI Hardened Slew rate (typ) (V/µs): 0.0015 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.00045 Vn at 1 kHz (typ) (nV√Hz): 450 CMRR (typ) (dB): 95 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1.7 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 116 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1.7 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 116 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Vos (offset voltage at 25°C) (max) (mV): 0.37 GBW (typ) (MHz): 0.008 Features: EMI Hardened Slew rate (typ) (V/µs): 0.002 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.00045 Vn at 1 kHz (typ) (nV√Hz): 420 CMRR (typ) (dB): 95 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 5.5 Features: Cost Optimized Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.815 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 88 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005

THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 5.5 Features: Cost Optimized Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.815 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 88 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005