Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, e-Trim™ Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008

2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 7.5 Vn at 1 kHz (typ) (nV√Hz): 7.5 Iq per channel (typ) (mA): 5.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: In, Out Features: EMI Hardened Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 4.5 Iout (typ) (mA): 100 2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 7.5 Vn at 1 kHz (typ) (nV√Hz): 7.5 Iq per channel (typ) (mA): 5.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: In, Out Features: EMI Hardened Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 4.5 Iout (typ) (mA): 100 2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Vos (offset voltage at 25°C) (max) (mV): 0.5 GBW (typ) (MHz): 0.006 Features: Cost Optimized, EMI Hardened Slew rate (typ) (V/µs): 0.0015 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.000425 Vn at 1 kHz (typ) (nV√Hz): 450 CMRR (typ) (dB): 98 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Vos (offset voltage at 25°C) (max) (mV): 0.3 GBW (typ) (MHz): 0.008 Features: EMI Hardened Slew rate (typ) (V/µs): 0.002 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.000425 Vn at 1 kHz (typ) (nV√Hz): 420 CMRR (typ) (dB): 98 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 10 Features: Zero Crossover Slew rate (typ) (V/µs): 5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 2 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 10 CMRR (typ) (dB): 114 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 2.7 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 105 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.16

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 2.7 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 105 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.16

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 2.7 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 105 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.16