Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.006 Slew rate (typ) (V/µs): 0.0015 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.00032 Vn at 1 kHz (typ) (nV√Hz): 450 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00065 Input common mode headroom (to positive supply) (typ) (V): 0.00032 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0018 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.00032 Vn at 1 kHz (typ) (nV√Hz): 420 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: EMI Hardened CMRR (typ) (dB): 98 Iout (typ) (A): 0.0047 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.000415 Input common mode headroom (to positive supply) (typ) (V): 0.00032 Output swing headroom (to negative supply) (typ) (V): 0.0025 Output swing headroom (to positive supply) (typ) (V): -0.0035

Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008

Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 5.5 Features: EMI Hardened Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027

Rating: Catalog Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.4 BW at Acl (MHz): 150 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 220 Architecture: Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz): 3.3 Iq per channel (typ) (mA): 1.35 Rail-to-rail: In to V-, Out Vos (offset voltage at 25°C) (max) (mV): 0.175 Operating temperature range (°C): -40 to 125 Iout (typ) (mA): 45 2nd harmonic (dBc): 128 3rd harmonic (dBc): 139 Frequency of harmonic distortion measurement (MHz): 0.1 GBW (typ) (MHz): 135 Input bias current (max) (pA): 1500000 Features: Shutdown CMRR (typ) (dB): 110 Rating: Catalog

3rd harmonic (dBc): 144 Frequency of harmonic distortion measurement (MHz): 0.01 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 120 BW at Acl (MHz): 120 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 115 Vn at flatband (typ) (nV√Hz): 2.5 Vn at 1 kHz (typ) (nV√Hz): 3.2 Iq per channel (typ) (mA): 2 Vos (offset voltage at 25°C) (max) (mV): 0.1 Rail-to-rail: In to V-, Out Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 117 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 0.5 Iout (typ) (mA): 100 2nd harmonic (dBc): 155 3rd harmonic (dBc): 144 Frequency of harmonic distortion measurement (MHz): 0.01

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.09 GBW (typ) (MHz): 0.3 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.15 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.05 Iq per channel (typ) (mA): 0.021 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 108 Rating: Automotive Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

Output swing headroom (to positive supply) (typ) (V): -0.025 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.09 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.004 Vn at 1 kHz (typ) (nV√Hz): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 100 CMRR (typ) (dB): 100 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.012 Input common mode headroom (to positive supply) (typ) (V): 0.004 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.065 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.065 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1