Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.065 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 85 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.075 Vn at 1 kHz (typ) (nV√Hz): 28 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 76 CMRR (typ) (dB): 76 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.075 Vn at 1 kHz (typ) (nV√Hz): 28 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 76 CMRR (typ) (dB): 76 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.075 Vn at 1 kHz (typ) (nV√Hz): 28 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 76 CMRR (typ) (dB): 76 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.025 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 2 GBW (typ) (MHz): 0.012 Features: Cost Optimized, EMI Hardened, Zero Crossover Slew rate (typ) (V/µs): 0.005 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.0008 Vn at 1 kHz (typ) (nV√Hz): 300 CMRR (typ) (dB): 110 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 110 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Output swing headroom (to positive supply) (typ) (V): -0.025 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 2 GBW (typ) (MHz): 0.012 Features: Cost Optimized, Zero Crossover Slew rate (typ) (V/µs): 0.005 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.0008 Vn at 1 kHz (typ) (nV√Hz): 300 CMRR (typ) (dB): 110 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 110 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Output swing headroom (to positive supply) (typ) (V): -0.025 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.09 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.004 Vn at 1 kHz (typ) (nV√Hz): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 100 CMRR (typ) (dB): 100 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.012 Input common mode headroom (to positive supply) (typ) (V): 0.004 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.006 Slew rate (typ) (V/µs): 0.0029 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.00035 Vn at 1 kHz (typ) (nV√Hz): 300 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 100 Iout (typ) (A): 0.012 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.0005 Input common mode headroom (to positive supply) (typ) (V): 0.00035 Output swing headroom (to negative supply) (typ) (V): 0.002 Output swing headroom (to positive supply) (typ) (V): -0.003

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0037 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.0005 Vn at 1 kHz (typ) (nV√Hz): 300 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.0008 Input common mode headroom (to positive supply) (typ) (V): 0.0005 Output swing headroom (to negative supply) (typ) (V): 0.002 Output swing headroom (to positive supply) (typ) (V): -0.003

Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 5.5 Features: EMI Hardened Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027