Output swing headroom (to positive supply) (typ) (V): -0.025 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.09 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.004 Vn at 1 kHz (typ) (nV√Hz): 83 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 100 CMRR (typ) (dB): 100 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.012 Input common mode headroom (to positive supply) (typ) (V): 0.004 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

2nd harmonic (dBc): 66 3rd harmonic (dBc): 68 Frequency of harmonic distortion measurement (MHz): 20 Architecture: Current FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.8 GBW (typ) (MHz): 650 BW at Acl (MHz): 650 Acl, min spec gain (V/V): 3 Slew rate (typ) (V/µs): 3000 Vn at flatband (typ) (nV√Hz): 6.6 Vn at 1 kHz (typ) (nV√Hz): 22 Iq per channel (typ) (mA): 34.5 Vos (offset voltage at 25°C) (max) (mV): 18 Rail-to-rail: No Features: Differential-to-single-ended conversion, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 48 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 58 Iout (typ) (mA): 95 2nd harmonic (dBc): 66 3rd harmonic (dBc): 68 Frequency of harmonic distortion measurement (MHz): 20

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.005 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened Input bias current (max) (pA): 96 CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

2nd harmonic (dBc): 60 3rd harmonic (dBc): 75 Frequency of harmonic distortion measurement (MHz): 20 Architecture: Current FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.8 GBW (typ) (MHz): 800 BW at Acl (MHz): 800 Acl, min spec gain (V/V): 3 Slew rate (typ) (V/µs): 5000 Vn at flatband (typ) (nV√Hz): 9 Vn at 1 kHz (typ) (nV√Hz): 40 Iq per channel (typ) (mA): 55 Vos (offset voltage at 25°C) (max) (mV): 18 Rail-to-rail: No Features: Differential-to-single-ended conversion, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 55 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 58 Iout (typ) (mA): 120 2nd harmonic (dBc): 60 3rd harmonic (dBc): 75 Frequency of harmonic distortion measurement (MHz): 20

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.095 THD + N at 1 kHz (typ) (%): 0.00008