2nd harmonic (dBc): 144 3rd harmonic (dBc): 155 Frequency of harmonic distortion measurement (MHz): 0.01 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 120 BW at Acl (MHz): 120 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 115 Vn at flatband (typ) (nV√Hz): 2.5 Vn at 1 kHz (typ) (nV√Hz): 3.2 Iq per channel (typ) (mA): 2 Vos (offset voltage at 25°C) (max) (mV): 0.1 Rail-to-rail: In to V-, Out Features: Adjustable BW/IQ/IOUT, C-Load Drive, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 117 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 0.5 Iout (typ) (mA): 100 2nd harmonic (dBc): 144 3rd harmonic (dBc): 155 Frequency of harmonic distortion measurement (MHz): 0.01

Output swing headroom (to positive supply) (typ) (V): -0.35 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.475 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.35

Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008

GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 8 Rail-to-rail: In to V-, Out Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 8 THD + N at 1 kHz (typ) (%): 0.00005 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.075 Product type: Essential Architecture: CMOS CMRR (typ) (dB): 120 Input bias current (max) (pA): 20

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.16 Slew rate (typ) (V/µs): 0.06 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.007 Vn at 1 kHz (typ) (nV√Hz): 89 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 60 CMRR (typ) (dB): 86 Iout (typ) (A): 0.0004 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

3rd harmonic (dBc): 83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 250 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 6.5 Vn at 1 kHz (typ) (nV√Hz): 6.5 Iq per channel (typ) (mA): 4.9 Vos (offset voltage at 25°C) (max) (mV): 8 Rail-to-rail: In, Out Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 4 Iout (typ) (mA): 100 2nd harmonic (dBc): 75 3rd harmonic (dBc): 83 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 80 3rd harmonic (dBc): 80 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 120 BW at Acl (MHz): 80 Acl, min spec gain (V/V): 1.1 Slew rate (typ) (V/µs): 115 Vn at flatband (typ) (nV√Hz): 2.5 Vn at 1 kHz (typ) (nV√Hz): 3.2 Iq per channel (typ) (mA): 2 Vos (offset voltage at 25°C) (max) (mV): 0.1 Rail-to-rail: In to V-, Out Features: Adjustable BW/IQ/IOUT, C-Load Drive, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 115 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 0.5 Iout (typ) (mA): 100 2nd harmonic (dBc): 80 3rd harmonic (dBc): 80 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.6 Rail-to-rail: In, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0037 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.00048 Vn at 1 kHz (typ) (nV√Hz): 250 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: EMI Hardened CMRR (typ) (dB): 101 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00085 Input common mode headroom (to positive supply) (typ) (V): 0.00048 Output swing headroom (to negative supply) (typ) (V): 0.002 Output swing headroom (to positive supply) (typ) (V): -0.003

Iout (typ) (A): 0.75 GBW (typ) (MHz): 0.6 Slew rate (typ) (V/µs): 0.17 Vos (offset voltage at 25°C) (max) (mV): 15 Offset drift (typ) (V/°C): 0.000009 Iq per channel (typ) (mA): 5 Features: EMI Hardened, High Cload Drive, Shutdown Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 100000 CMRR (typ) (dB): 90 Rail-to-rail: No Architecture: Bipolar

Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008