Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 9.5 Vos (offset voltage at 25°C) (max) (mV): 1.35 Iq per channel (typ) (mA): 1.15 Vn at 1 kHz (typ) (nV√Hz): 5.8 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 CMRR (typ) (dB): 100 Iout (typ) (A): 0.021 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Space Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Rating: Catalog Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 BW at Acl (MHz): 118 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 507 Architecture: Bipolar, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz): 4.6 Iq per channel (typ) (mA): 18 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 4 Operating temperature range (°C): -40 to 85 Iout (typ) (mA): 36 2nd harmonic (dBc): 124.7 3rd harmonic (dBc): 114.7 Frequency of harmonic distortion measurement (MHz): 0.001 GBW (typ) (MHz): 118 Input bias current (max) (pA): 2000000 Features: Adjustable BW/IQ/IOUT, Shutdown CMRR (typ) (dB): 90 Rating: Catalog

Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 88 BW at Acl (MHz): 8.8 Acl, min spec gain (V/V): 10 Slew rate (typ) (V/µs): 28 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 1.15 Vos (offset voltage at 25°C) (max) (mV): 0.15 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 1 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 21

THD + N at 1 kHz (typ) (%): 0.00005 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.12 GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.35 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 5.1 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.00005

GBW (typ) (MHz): 12 Slew rate (typ) (V/µs): 5 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 6.5 Features: Standard Amps THD + N at 1 kHz (typ) (%): 0.0005 Rating: Automotive Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.01 Architecture: Bipolar CMRR (typ) (dB): 110 Input bias current (max) (pA): 500000

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.5 Slew rate (typ) (V/µs): 0.25 Vos (offset voltage at 25°C) (max) (mV): 0.95 Iq per channel (typ) (mA): 0.1 Vn at 1 kHz (typ) (nV√Hz): 22 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 CMRR (typ) (dB): 90 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.25 Input common mode headroom (to positive supply) (typ) (V): -0.25 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.03

Output swing headroom (to positive supply) (typ) (V): -0.35 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.475 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened, Small Size Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.35

THD + N at 1 kHz (typ) (%): 0.000025 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 18 Slew rate (typ) (V/µs): 6.4 Rail-to-rail: Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 4500 Iout (typ) (A): 0.065 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000025

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 5.5 Features: EMI Hardened Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027