THD + N at 1 kHz (typ) (%): 0.000025 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 18 Slew rate (typ) (V/µs): 6.4 Rail-to-rail: Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 4500 Iout (typ) (A): 0.065 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000025

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 20 Features: EMI Hardened, Shutdown, Small Size, Zero Crossover Slew rate (typ) (V/µs): 10 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1.5 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 8.5 CMRR (typ) (dB): 114 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 0.9 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005

THD + N at 1 kHz (typ) (%): 0.00005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.12 GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.35 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 5.1 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.00005

Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 2 Vn at 1 kHz (typ) (nV√Hz): 4.5 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.029 Architecture: Bipolar CMRR (typ) (dB): 100 Input bias current (max) (pA): 750000

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 5.5 Features: EMI Hardened, Small Size Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027

THD + N at 1 kHz (typ) (%): 0.007 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 3.5 Slew rate (typ) (V/µs): 1.4 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.35 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 100 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.035 Output swing headroom (to positive supply) (typ) (V): -0.03 THD + N at 1 kHz (typ) (%): 0.007

Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.00005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.12 GBW (typ) (MHz): 11 Features: Small Size Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.35 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 5.1 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.00005

THD + N at 1 kHz (typ) (%): 0.000025 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 18 Slew rate (typ) (V/µs): 6.4 Rail-to-rail: Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 4500 Iout (typ) (A): 0.065 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000025

Rating: Catalog Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.75 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 BW at Acl (MHz): 2400 Acl, min spec gain (V/V): 2 Slew rate (typ) (V/µs): 3200 Architecture: Bipolar, Fixed Gain/Buffer, Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz): 1.7 Iq per channel (typ) (mA): 100 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 5 Operating temperature range (°C): -40 to 85 Iout (typ) (mA): 80 2nd harmonic (dBc): 87 3rd harmonic (dBc): 103 Frequency of harmonic distortion measurement (MHz): 10 GBW (typ) (MHz): 2400 Input bias current (max) (pA): 400000000 Features: On chip gain resistors, Shutdown CMRR (typ) (dB): 60 Rating: Catalog

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.05 GBW (typ) (MHz): 0.35 Features: EMI Hardened, Small Size, Zero Drift Slew rate (typ) (V/µs): 0.16 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.02 Iq per channel (typ) (mA): 0.021 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 115 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 500 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03