TLV2774-EP
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 增强型产品四路、5.5V、5.1MHz、高压摆率 (10.5V/μs) 运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 5.1
Slew rate (typ) (V/µs): 10.5
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 1
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: HiRel Enhanced Product
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
CMRR (typ) (dB): 96
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.3
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 5.1
Slew rate (typ) (V/µs): 10.5
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 1
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: HiRel Enhanced Product
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
CMRR (typ) (dB): 96
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.3
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.1
TLV2774A-EP
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 增强型产品四路、5.5V、5.1MHz、2.1mV 失调电压、高压摆率 (10.5V/μs) 运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 5.1
Slew rate (typ) (V/µs): 10.5
Vos (offset voltage at 25°C) (max) (mV): 2.1
Iq per channel (typ) (mA): 1
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: HiRel Enhanced Product
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
CMRR (typ) (dB): 96
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.3
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 5.1
Slew rate (typ) (V/µs): 10.5
Vos (offset voltage at 25°C) (max) (mV): 2.1
Iq per channel (typ) (mA): 1
Vn at 1 kHz (typ) (nV√Hz): 17
Rating: HiRel Enhanced Product
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 60
CMRR (typ) (dB): 96
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.3
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.1
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.025
Offset drift (typ) (µV/°C): 0.32
Input bias current (max) (pA): 10
GBW (typ) (MHz): 5.5
Features: EMI Hardened, Small Size, e-Trim™
Slew rate (typ) (V/µs): 2
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 0.76
Vn at 1 kHz (typ) (nV√Hz): 7.5
CMRR (typ) (dB): 90
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.03
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.00027
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.025
Offset drift (typ) (µV/°C): 0.32
Input bias current (max) (pA): 10
GBW (typ) (MHz): 5.5
Features: EMI Hardened, Small Size, e-Trim™
Slew rate (typ) (V/µs): 2
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 0.76
Vn at 1 kHz (typ) (nV√Hz): 7.5
CMRR (typ) (dB): 90
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.03
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.00027
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.025
Offset drift (typ) (µV/°C): 0.32
Input bias current (max) (pA): 10
GBW (typ) (MHz): 5.5
Features: EMI Hardened, e-Trim™
Slew rate (typ) (V/µs): 2
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 0.76
Vn at 1 kHz (typ) (nV√Hz): 7.5
CMRR (typ) (dB): 90
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.03
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.00027
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.025
Offset drift (typ) (µV/°C): 0.32
Input bias current (max) (pA): 10
GBW (typ) (MHz): 5.5
Features: EMI Hardened, e-Trim™
Slew rate (typ) (V/µs): 2
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 0.76
Vn at 1 kHz (typ) (nV√Hz): 7.5
CMRR (typ) (dB): 90
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.03
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.01
THD + N at 1 kHz (typ) (%): 0.00027
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
GBW (typ) (MHz): 180
Slew rate (typ) (V/µs): 2000
Rail-to-rail: No
Vos (offset voltage at 25°C) (max) (mV): 60
Iq per channel (typ) (mA): 14
Vn at 1 kHz (typ) (nV√Hz): 3
THD + N at 1 kHz (typ) (%): 0.00003
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.25
Architecture: Voltage FB
CMRR (typ) (dB): 0
Input bias current (max) (pA): 5000000
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
GBW (typ) (MHz): 180
更多
Slew rate (typ) (V/µs): 2000
Rail-to-rail: No
Vos (offset voltage at 25°C) (max) (mV): 60
Iq per channel (typ) (mA): 14
Vn at 1 kHz (typ) (nV√Hz): 3
THD + N at 1 kHz (typ) (%): 0.00003
Rating: Catalog
Operating temperature range (°C): -40 to 85
Iout (typ) (A): 0.25
Architecture: Voltage FB
CMRR (typ) (dB): 0
Input bias current (max) (pA): 5000000
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Vos (offset voltage at 25°C) (max) (mV): 0.5
Offset drift (typ) (µV/°C): 0.5
Input bias current (max) (pA): 30000
GBW (typ) (MHz): 22
Slew rate (typ) (V/µs): 2.4
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 2.2
Vn at 1 kHz (typ) (nV√Hz): 2.9
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.047
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.009
Output swing headroom (to positive supply) (typ) (V): -0.008
更多
THD + N at 1 kHz (typ) (%): 0.001
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Vos (offset voltage at 25°C) (max) (mV): 0.5
Offset drift (typ) (µV/°C): 0.5
Input bias current (max) (pA): 30000
GBW (typ) (MHz): 22
Slew rate (typ) (V/µs): 2.4
Rail-to-rail: In, Out
Iq per channel (typ) (mA): 2.2
Vn at 1 kHz (typ) (nV√Hz): 2.9
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.047
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.009
Output swing headroom (to positive supply) (typ) (V): -0.008
THD + N at 1 kHz (typ) (%): 0.001
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12
GBW (typ) (MHz): 12
Slew rate (typ) (V/µs): 5
Rail-to-rail: Out
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 2
Vn at 1 kHz (typ) (nV√Hz): 4
THD + N at 1 kHz (typ) (%): 0.003
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.0014
Architecture: Bipolar
CMRR (typ) (dB): 85
Input bias current (max) (pA): 750000
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12
GBW (typ) (MHz): 12
更多
Slew rate (typ) (V/µs): 5
Rail-to-rail: Out
Vos (offset voltage at 25°C) (max) (mV): 4
Iq per channel (typ) (mA): 2
Vn at 1 kHz (typ) (nV√Hz): 4
THD + N at 1 kHz (typ) (%): 0.003
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.0014
Architecture: Bipolar
CMRR (typ) (dB): 85
Input bias current (max) (pA): 750000
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Vos (offset voltage at 25°C) (max) (mV): 0.5
Offset drift (typ) (µV/°C): 0.1
Input bias current (max) (pA): 90000
GBW (typ) (MHz): 10
Features: Small Size
Slew rate (typ) (V/µs): 1.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.158
Vn at 1 kHz (typ) (nV√Hz): 14
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.026
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -0.9
Output swing headroom (to negative supply) (typ) (V): 0.032
更多
Output swing headroom (to positive supply) (typ) (V): -0.037
THD + N at 1 kHz (typ) (%): 0.002
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Vos (offset voltage at 25°C) (max) (mV): 0.5
Offset drift (typ) (µV/°C): 0.1
Input bias current (max) (pA): 90000
GBW (typ) (MHz): 10
Features: Small Size
Slew rate (typ) (V/µs): 1.6
Rail-to-rail: In to V-, Out
Iq per channel (typ) (mA): 0.158
Vn at 1 kHz (typ) (nV√Hz): 14
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.026
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -0.9
Output swing headroom (to negative supply) (typ) (V): 0.032
Output swing headroom (to positive supply) (typ) (V): -0.037
THD + N at 1 kHz (typ) (%): 0.002
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.4
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.225
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 102
Rating: Automotive
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 0.4
Offset drift (typ) (µV/°C): 2
Input bias current (max) (pA): 70000
GBW (typ) (MHz): 1.7
Slew rate (typ) (V/µs): 0.5
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.225
Vn at 1 kHz (typ) (nV√Hz): 17
CMRR (typ) (dB): 102
Rating: Automotive
Operating temperature range (°C): -40 to 125
Iout (typ) (A): 0.003
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.7
Output swing headroom (to positive supply) (typ) (V): -0.7
TLE2072A-Q1
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 汽车级、双路、38V、10MHz、40V/μs 压摆率、2mV 失调电压、JFET 输入运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V+
GBW (typ) (MHz): 10
Slew rate (typ) (V/µs): 40
Vos (offset voltage at 25°C) (max) (mV): 3.5
Iq per channel (typ) (mA): 1.55
Vn at 1 kHz (typ) (nV√Hz): 12
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2.4
Input bias current (max) (pA): 175
CMRR (typ) (dB): 98
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): 3.1
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.8
Output swing headroom (to positive supply) (typ) (V): -0.9