Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 2.8 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.4 Input bias current (max) (pA): 50 CMRR (typ) (dB): 84 Iout (typ) (A): 0.09 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.04

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Rail-to-rail: No GBW (typ) (MHz): 15 Slew rate (typ) (V/µs): 70 Vos (offset voltage at 25°C) (max) (mV): 10 Iq per channel (typ) (mA): 5 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Automotive Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 250000 CMRR (typ) (dB): 100 Iout (typ) (A): 0.021 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 3.5 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 2 Output swing headroom (to positive supply) (typ) (V): -2

Slew rate (typ) (V/µs): 5 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 2 Vn at 1 kHz (typ) (nV√Hz): 4 THD + N at 1 kHz (typ) (%): 0.003 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.0014 Architecture: Bipolar CMRR (typ) (dB): 85 Input bias current (max) (pA): 750000

Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 88 BW at Acl (MHz): 8.8 Acl, min spec gain (V/V): 10 Slew rate (typ) (V/µs): 28 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 1.3 Vos (offset voltage at 25°C) (max) (mV): 0.15 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 1.8 Iout (typ) (mA): 21

Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 GBW (typ) (MHz): 88 BW at Acl (MHz): 8.8 Acl, min spec gain (V/V): 10 Slew rate (typ) (V/µs): 28 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 1.3 Vos (offset voltage at 25°C) (max) (mV): 1.35 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 1.8 Iout (typ) (mA): 21

THD + N at 1 kHz (typ) (%): 0.001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 0.5 Input bias current (max) (pA): 30000 GBW (typ) (MHz): 22 Slew rate (typ) (V/µs): 2.4 Rail-to-rail: In, Out Iq per channel (typ) (mA): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.9 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.047 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.009 Output swing headroom (to positive supply) (typ) (V): -0.008 THD + N at 1 kHz (typ) (%): 0.001

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.037 Vn at 1 kHz (typ) (nV√Hz): 70 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3.3 Input bias current (max) (pA): 38000 CMRR (typ) (dB): 93 Iout (typ) (A): 0.01 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.07

Output swing headroom (to positive supply) (typ) (V): -0.003 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 31 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 2.47 Vn at 1 kHz (typ) (nV√Hz): 8 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.7 Features: EMI Hardened Input bias current (max) (pA): 10 CMRR (typ) (dB): 94 Iout (typ) (A): 0.15 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -1.1 Output swing headroom (to negative supply) (typ) (V): 0.003 Output swing headroom (to positive supply) (typ) (V): -0.003

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Rail-to-rail: No GBW (typ) (MHz): 13 Slew rate (typ) (V/µs): 2.8 Vos (offset voltage at 25°C) (max) (mV): 0.1 Iq per channel (typ) (mA): 3.8 Vn at 1 kHz (typ) (nV√Hz): 2.5 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 0.4 Input bias current (max) (pA): 90000 CMRR (typ) (dB): 131 Iout (typ) (A): 0.035 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 2 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.8

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.025 Offset drift (typ) (µV/°C): 0.32 Input bias current (max) (pA): 10 GBW (typ) (MHz): 5.5 Features: EMI Hardened, Small Size, e-Trim™ Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027