Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.22 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 14 Features: Decompensated Slew rate (typ) (V/µs): 5.6 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.85 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024

Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.22 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 14 Features: Decompensated Slew rate (typ) (V/µs): 5.6 Rail-to-rail: In, Out Iq per channel (typ) (mA): 1.05 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024

2nd harmonic (dBc): 75 3rd harmonic (dBc): 80 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.6 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 115 BW at Acl (MHz): 115 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 250 Vn at flatband (typ) (nV√Hz): 8.4 Vn at 1 kHz (typ) (nV√Hz): 8.4 Iq per channel (typ) (mA): 0.46 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 70 Input bias current (max) (pA): 750000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 40 2nd harmonic (dBc): 75 3rd harmonic (dBc): 80 Frequency of harmonic distortion measurement (MHz): 1

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 0.95 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Automotive Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Output swing headroom (to positive supply) (typ) (V): -0.8 THD + N at 1 kHz (typ) (%): 0.0052 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 1.5 GBW (typ) (MHz): 6 Features: High Cload Drive Slew rate (typ) (V/µs): 45 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 1.7 Iq per channel (typ) (mA): 3.4 Vn at 1 kHz (typ) (nV√Hz): 10.5 CMRR (typ) (dB): 108 Rating: Automotive Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 1500000 Iout (typ) (A): 0.031 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1.8 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.8 THD + N at 1 kHz (typ) (%): 0.0052

2nd harmonic (dBc): 88 3rd harmonic (dBc): 89 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 130 BW at Acl (MHz): 260 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 500 Vn at flatband (typ) (nV√Hz): 8 Vn at 1 kHz (typ) (nV√Hz): 8 Iq per channel (typ) (mA): 1.1 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 67 Input bias current (max) (pA): 1600000 Offset drift (typ) (µV/°C): 15 Iout (typ) (mA): 40 2nd harmonic (dBc): 88 3rd harmonic (dBc): 89 Frequency of harmonic distortion measurement (MHz): 1

Output swing headroom (to positive supply) (typ) (V): -0.065 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.005 Offset drift (typ) (µV/°C): 0.004 Input bias current (max) (pA): 100 GBW (typ) (MHz): 5 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 2.6 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.95 Vn at 1 kHz (typ) (nV√Hz): 11 CMRR (typ) (dB): 139 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.083 Output swing headroom (to positive supply) (typ) (V): -0.065

Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.2 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 14 Features: Decompensated Slew rate (typ) (V/µs): 5.6 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.79 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 130 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04 THD + N at 1 kHz (typ) (%): 0.024

Slew rate (typ) (V/µs): 20 Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 0.7 Iq per channel (typ) (mA): 5 Vn at 1 kHz (typ) (nV√Hz): 2.5 THD + N at 1 kHz (typ) (%): 0.00003 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.026 Architecture: Voltage FB CMRR (typ) (dB): 120 Input bias current (max) (pA): 72000

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.01 Offset drift (typ) (µV/°C): 0.02 Input bias current (max) (pA): 200 GBW (typ) (MHz): 0.35 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.16 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.017 Vn at 1 kHz (typ) (nV√Hz): 65 CMRR (typ) (dB): 130 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03